公开(公告)号：US20120211884A1

公开(公告)日：2012-08-23

申请号：US13033064

申请日：2011-02-23

申请人： Frank Stepniak ,  Christopher Daniel Manack ,  Licheng M. Han

发明人： Frank Stepniak ,  Christopher Daniel Manack ,  Licheng M. Han

IPC分类号： H01L23/485 ,  H01L21/441

CPC分类号： H01L23/3114 ,  H01L23/3192 ,  H01L23/525 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/0343 ,  H01L2224/0361 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/11334 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/16237 ,  H01L2224/81815 ,  H01L2224/81855 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/15787 ,  H01L2924/01082 ,  H01L2924/00012 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00

摘要： A method and structure for forming a semiconductor device, for example a device including a wafer chip scale package (WCSP), can include the formation of at least one conductive layer which contacts a bond pad. The at least one conductive layer can be patterned using a first mask, then a passivation layer can be formed over the patterned at least one conductive layer. The passivation layer can be patterned using a second mask to expose the at least one conductive layer, then a conductive layer such as a solder ball, conductive bump, metal-filled paste, or another conductor is formed on the at least one conductive layer. The method can result in a structure which is formed using a reduced number of mask steps.

摘要翻译： 用于形成半导体器件的方法和结构，例如包括晶片芯片级封装（WCSP）的器件可以包括形成接触焊盘的至少一个导电层。 可以使用第一掩模对至少一个导电层进行构图，然后可以在图案化的至少一个导电层上形成钝化层。 可以使用第二掩模对钝化层进行图案化以暴露至少一个导电层，然后在至少一个导电层上形成导电层，例如焊球，导电凸块，填充金属的糊状物或另一导体。 该方法可以产生使用减少数量的掩模步骤形成的结构。

公开(公告)号：US06424044B1

公开(公告)日：2002-07-23

申请号：US10050697

申请日：2002-01-18

申请人： Licheng M. Han ,  Xu Yi ,  Joseph Zhifeng Xie ,  Mei Sheng Zhou ,  Simon Chooi

发明人： Licheng M. Han ,  Xu Yi ,  Joseph Zhifeng Xie ,  Mei Sheng Zhou ,  Simon Chooi

IPC分类号： H01L2348

CPC分类号： H01L21/76834 ,  H01L21/76807 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a boron carbide layer for use as a barrier and an etch-stop layer in a copper dual damascene structure, and the structure itself are disclosed. In addition to providing a good barrier to copper diffusion, good insulating properties, high etch selectivity with respect to dielectric insulators, boron carbide also provides good electrical characteristics because of its low dielectric constant of less than 5. The amorphous boron carbide is formed in a PECVD chamber by introducing a boron source gas such as B2H6, B5H9+, and carbon source gas such as CH4 and C2H6 at a deposition temperature of about 400° C. Any one, or any combination of the passivation, etch-stop, cap layers of the damascene structure can comprise boron carbide.

摘要翻译： 公开了一种形成用作铜双镶嵌结构中的屏障和蚀刻停止层的碳化硼层的方法，以及结构本身。 除了提供对铜扩散的良好屏障之外，良好的绝缘性能，相对于介电绝缘体的高蚀刻选择性，由于其低介电常数小于5，碳化硼也提供良好的电特性。无定形碳化硼形成于 通过在约400℃的沉积温度下引入诸如B 2 H 6，B 5 H 9+的硼源气体和诸如CH 4和C 2 H 6的碳源气体的PECVD室。钝化，蚀刻停止，盖层的任何一种或任何组合 镶嵌结构可以包括碳化硼。

公开(公告)号：US06352921B1

公开(公告)日：2002-03-05

申请号：US09619377

申请日：2000-07-19

申请人： Licheng M. Han ,  Yi Xu ,  Joseph Zhifeng Xie ,  Mei Sheng Zhou ,  Simon Chooi

发明人： Licheng M. Han ,  Yi Xu ,  Joseph Zhifeng Xie ,  Mei Sheng Zhou ,  Simon Chooi

IPC分类号： H01L214763

CPC分类号： H01L21/76834 ,  H01L21/76807 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a boron carbide layer for use as a barrier and an etch-stop layer in a copper dual damascene structure, and the structure itself are disclosed. In addition to providing a good barrier to copper diffusion, good insulating properties, high etch selectivity with respect to dielectric insulators, boron carbide also provides good electrical characteristics because of its low dielectric constant of less than 5. The amorphous boron carbide is formed in a PECVD chamber by introducing a boron source gas such as B2H6, B5H9+, and carbon source gas such as CH4 and C2H6 at a deposition temperature of about 400° C. Any one, or any combination of the passivation, etch-stop, cap layers of the damascene structure can comprise boron carbide.