发明申请
- 专利标题： SEMICONDUCTOR DEVICES HAVING PLANARIZED INSULATION LAYERS AND METHODS OF FABRICATING THE SAME
- 专利标题（中）： 具有平面绝缘层的半导体器件及其制造方法
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申请号： US13398895申请日： 2012-02-17
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公开(公告)号： US20120214316A1公开(公告)日： 2012-08-23
- 发明人: Jin-Woo Bae , Inseak Hwang , Myangsik Han , Se Jung Park , Sung-Min Cho , YoungHo Koh , Yi Koan Hong
- 申请人： Jin-Woo Bae , Inseak Hwang , Myangsik Han , Se Jung Park , Sung-Min Cho , YoungHo Koh , Yi Koan Hong
- 优先权： KR10-2011-0015165 20110221
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A semiconductor device and a method of fabricating a semiconductor device including a step of providing a substrate having a first region and a second region adjacent to each other, a step of forming a structure on the substrate in the first region, the structure including a top surface and a sidewall, a step of forming a first insulation layer on the substrate including the structure, the first insulation layer including a first top surface in the first region, an inclined sidewall on the sidewall of structure, and a second top surface in the second region, a step of forming a second insulation layer on the first insulation layer, and a step of planarizing the second and first insulation layers to form a common planarized surface.