发明申请
US20120217510A1 LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND
审中-公开
使用III族氮化合物的发光半导体器件
- 专利标题： LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND
- 专利标题（中）： 使用III族氮化合物的发光半导体器件
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申请号： US13468486申请日： 2012-05-10
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公开(公告)号： US20120217510A1公开(公告)日： 2012-08-30
- 发明人: Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
- 申请人： Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
- 申请人地址： JP Aichi-ken
- 专利权人： Toyoda Gosei Co., Ltd.
- 当前专利权人： Toyoda Gosei Co., Ltd.
- 当前专利权人地址： JP Aichi-ken
- 优先权： JP76514/1994 19940322; JP113484/1994 19940428; JP197914/1994 19940728
- 主分类号： H01L33/32
- IPC分类号： H01L33/32 ; H01L33/40
摘要：
A method of producing a light-emitting semiconductor device of a group III nitride compound includes forming a high carrier concentration N+-layer satisfying the formula (Alx3Ga1-x3)y3In1-y3N, wherein 0≦x3≦1, 0≦y3≦1 and 0≦x3+y3≦1, forming an emission layer of a group III nitride compound semiconductor satisfying the formula, Alx1Gay1In1-x1-y1N, where 0≦x1≦1, 0≦y1≦1 and 0≦x1+y1≦1 on the high carrier concentration layer N+-layer, and forming a P-layer of a P-type conduction, on the emission layer, the P-layer including aluminum gallium nitride satisfying the formula Alx2Ga1-x2N, wherein 0≦x2≦1.