发明申请
- 专利标题： Semiconductor Component with Improved Dynamic Behavior
- 专利标题（中）： 具有改进的动态行为的半导体组件
-
申请号： US13036088申请日： 2011-02-28
-
公开(公告)号： US20120217539A1公开(公告)日： 2012-08-30
- 发明人: Hans Peter Felsl , Thomas Raker , Hans-Joachim Schulze , Franz-Josef Niedernostheide
- 申请人： Hans Peter Felsl , Thomas Raker , Hans-Joachim Schulze , Franz-Josef Niedernostheide
- 申请人地址： DE Villach
- 专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人地址： DE Villach
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L29/74 ; H01L29/861
摘要：
Disclosed is a semiconductor component that includes a semiconductor body, a first emitter region of a first conductivity type in the semiconductor body, a second emitter region of a second conductivity type spaced apart from the first emitter region in a vertical direction of the semiconductor body, a base region of one conductivity type arranged between the first emitter region and the second emitter region, and at least two higher doped regions of the same conductivity type as the base region and arranged in the base region. The at least two higher doped regions are spaced apart from one another in a lateral direction of the semiconductor body and separated from one another only by sections of the base region.
公开/授权文献
- US09105682B2 Semiconductor component with improved dynamic behavior 公开/授权日：2015-08-11
信息查询
IPC分类:
