发明申请
US20120217563A1 METHOD AND SYSTEM FOR PROVIDING CONTACT TO A FIRST POLYSILICON LAYER IN A FLASH MEMORY DEVICE
有权
用于提供与闪存存储器件中的第一多晶硅层接触的方法和系统
- 专利标题： METHOD AND SYSTEM FOR PROVIDING CONTACT TO A FIRST POLYSILICON LAYER IN A FLASH MEMORY DEVICE
- 专利标题（中）： 用于提供与闪存存储器件中的第一多晶硅层接触的方法和系统
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申请号： US13465649申请日： 2012-05-07
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公开(公告)号： US20120217563A1公开(公告)日： 2012-08-30
- 发明人: Mark S. CHANG , Hao Fang , King Wai Kelwin
- 申请人： Mark S. CHANG , Hao Fang , King Wai Kelwin
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A method and system for providing at least one contact in a flash memory device is disclosed. The flash memory device includes a plurality of gate stacks and at lease one component including a polysilicon layer as a top surface. The method and system further include forming a silicide on the top surface of the polysilicon layer and providing an insulating layer covering the plurality of gate stacks, the at least one component and the silicide. The method and system also include etching the insulating layer to provide at least one contact hole. The insulating layer etching step uses the silicide as an etch stop layer to ensure that the insulating etching step does not etch through the polysilicon layer. The method and system also include filling the at least one contact hole with a conductor.
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