公开(公告)号：US20120217563A1

公开(公告)日：2012-08-30

申请号：US13465649

申请日：2012-05-07

申请人： Mark S. CHANG ,  Hao Fang ,  King Wai Kelwin

发明人： Mark S. CHANG ,  Hao Fang ,  King Wai Kelwin

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L27/11521 ,  H01L21/76816 ,  H01L27/115

摘要： A method and system for providing at least one contact in a flash memory device is disclosed. The flash memory device includes a plurality of gate stacks and at lease one component including a polysilicon layer as a top surface. The method and system further include forming a silicide on the top surface of the polysilicon layer and providing an insulating layer covering the plurality of gate stacks, the at least one component and the silicide. The method and system also include etching the insulating layer to provide at least one contact hole. The insulating layer etching step uses the silicide as an etch stop layer to ensure that the insulating etching step does not etch through the polysilicon layer. The method and system also include filling the at least one contact hole with a conductor.

摘要翻译： 公开了一种用于在闪速存储器件中提供至少一个触点的方法和系统。 闪速存储器件包括多个栅极堆叠，并且至少包括一个包括多晶硅层作为顶表面的部件。 该方法和系统还包括在多晶硅层的顶表面上形成硅化物，并提供覆盖多个栅叠层，至少一个元件和硅化物的绝缘层。 该方法和系统还包括蚀刻绝缘层以提供至少一个接触孔。 绝缘层蚀刻步骤使用硅化物作为蚀刻停止层，以确保绝缘蚀刻步骤​​不会蚀刻通过多晶硅层。 该方法和系统还包括用导体填充至少一个接触孔。

公开(公告)号：US20120302017A1

公开(公告)日：2012-11-29

申请号：US13566741

申请日：2012-08-03

申请人： Mark S. CHANG ,  Hao Fang ,  King Wai Kelwin Ko

发明人： Mark S. CHANG ,  Hao Fang ,  King Wai Kelwin Ko

IPC分类号： H01L21/336

CPC分类号： H01L27/11521 ,  H01L21/76816 ,  H01L27/115

摘要： A method and system for providing at least one contact in a flash memory device is disclosed. The flash memory device includes a plurality of gate stacks and at lease one component including a polysilicon layer as a top surface. The method and system further include forming a silicide on the top surface of the polysilicon layer and providing an insulating layer covering the plurality of gate stacks, the at least one component and the silicide. The method and system also include etching the insulating layer to provide at least one contact hole. The insulating layer etching step uses the silicide as an etch stop layer to ensure that the insulating etching step does not etch through the polysilicon layer. The method and system also include filling the at least one contact hole with a conductor.

摘要翻译： 公开了一种用于在闪速存储器件中提供至少一个触点的方法和系统。 闪速存储器件包括多个栅极堆叠，并且至少包括一个包括多晶硅层作为顶表面的部件。 该方法和系统还包括在多晶硅层的顶表面上形成硅化物，并提供覆盖多个栅叠层，至少一个元件和硅化物的绝缘层。 该方法和系统还包括蚀刻绝缘层以提供至少一个接触孔。 绝缘层蚀刻步骤使用硅化物作为蚀刻停止层，以确保绝缘蚀刻步骤​​不会蚀刻穿过多晶硅层。 该方法和系统还包括用导体填充至少一个接触孔。