发明申请
- 专利标题： Method of Manufacturing Semiconductor Device Having Metal Gate
- 专利标题（中）： 具有金属栅极的半导体器件的制造方法
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申请号： US13033616申请日： 2011-02-24
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公开(公告)号： US20120220113A1公开(公告)日： 2012-08-30
- 发明人: Po-Jui Liao , Tsung-Lung Tsai , Chien-Ting Lin , Shao-Hua Hsu , Shui-Yen Lu , Pei-Yu Chou , Shin-Chi Chen , Jiunn-Hsiung Liao , Shang-Yuan Tsai , Chan-Lon Yang , Teng-Chun Tsai , Chun-Hsien Lin
- 申请人： Po-Jui Liao , Tsung-Lung Tsai , Chien-Ting Lin , Shao-Hua Hsu , Shui-Yen Lu , Pei-Yu Chou , Shin-Chi Chen , Jiunn-Hsiung Liao , Shang-Yuan Tsai , Chan-Lon Yang , Teng-Chun Tsai , Chun-Hsien Lin
- 主分类号： H01L21/28
- IPC分类号： H01L21/28
摘要：
The present invention provides a method of manufacturing semiconductor device having metal gate. First, a substrate is provided. A first conductive type transistor having a first sacrifice gate and a second conductive type transistor having a second sacrifice gate are disposed on the substrate. The first sacrifice gate is removed to form a first trench and then a first metal layer and a first material layer are formed in the first trench. Next, the first metal layer and the first material layer are flattened. The second sacrifice gate is removed to form a second trench and then a second metal layer and a second material layer are formed in the second trench. Lastly, the second metal layer and the second material layer are flattened.
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