发明申请
- 专利标题： METAL GATE STRUCTURE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 金属门结构及其制造方法
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申请号： US13037383申请日： 2011-03-01
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公开(公告)号： US20120223397A1公开(公告)日： 2012-09-06
- 发明人: Chan-Lon Yang , Chi-Mao Hsu , Chun-Yuan Wu , Tzyy-Ming Cheng , Shih-Fang Tzou , Chin-Fu Lin , Hsin-Fu Huang , Min-Chuan Tsai
- 申请人： Chan-Lon Yang , Chi-Mao Hsu , Chun-Yuan Wu , Tzyy-Ming Cheng , Shih-Fang Tzou , Chin-Fu Lin , Hsin-Fu Huang , Min-Chuan Tsai
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/28
摘要：
A method for manufacturing a metal gate structure includes providing a substrate having a high-K gate dielectric layer and a bottom barrier layer sequentially formed thereon, forming a work function metal layer on the substrate, and performing an anneal treatment to the work function metal layer in-situ.
公开/授权文献
- US09166020B2 Metal gate structure and manufacturing method thereof 公开/授权日：2015-10-20
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