公开(公告)号：US09490342B2

公开(公告)日：2016-11-08

申请号：US13161591

申请日：2011-06-16

Applicant: Chien-Ming Lai ,  Yi-Wen Chen ,  Zhi-Cheng Lee ,  Tong-Jyun Huang ,  Che-Hua Hsu ,  Kun-Hsien Lin ,  Tzung-Ying Lee ,  Chi-Mao Hsu ,  Hsin-Fu Huang ,  Chin-Fu Lin

Inventor： Chien-Ming Lai ,  Yi-Wen Chen ,  Zhi-Cheng Lee ,  Tong-Jyun Huang ,  Che-Hua Hsu ,  Kun-Hsien Lin ,  Tzung-Ying Lee ,  Chi-Mao Hsu ,  Hsin-Fu Huang ,  Chin-Fu Lin

IPC: H01L21/3205 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/28 ,  H01L21/3213 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L29/6659 ,  H01L21/28088 ,  H01L21/32134 ,  H01L21/823842 ,  H01L29/42376 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/7833

Abstract: A method for fabricating a semiconductor device includes the following steps. Firstly, a dummy gate structure having a dummy gate electrode layer is provided. Then, the dummy gate electrode layer is removed to form an opening in the dummy gate structure, thereby exposing an underlying layer beneath the dummy gate electrode layer. Then, an ammonium hydroxide treatment process is performed to treat the dummy gate structure. Afterwards, a metal material is filled into the opening.

Abstract translation: 一种制造半导体器件的方法包括以下步骤。 首先，提供具有伪栅极电极层的虚拟栅极结构。 然后，去除虚拟栅极电极层，以在虚拟栅极结构中形成开口，从而暴露在伪栅极电极层下面的下面的层。 然后，进行氢氧化铵处理处理以处理伪栅极结构。 之后，将金属材料填充到开口中。

公开(公告)号：US08691681B2

公开(公告)日：2014-04-08

申请号：US13343690

申请日：2012-01-04

Applicant: Chi-Mao Hsu ,  Hsin-Fu Huang ,  Chin-Fu Lin ,  Min-Chuan Tsai ,  Wei-Yu Chen ,  Chien-Hao Chen

Inventor： Chi-Mao Hsu ,  Hsin-Fu Huang ,  Chin-Fu Lin ,  Min-Chuan Tsai ,  Wei-Yu Chen ,  Chien-Hao Chen

IPC: H01L21/3205 ,  H01L21/4763 ,  H01L29/76

CPC classification number: H01L21/28026 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/823842 ,  H01L29/401 ,  H01L29/49 ,  H01L29/66545 ,  H01L29/7833 ,  H01L29/7843

Abstract: The present invention provides a method of forming a semiconductor device having a metal gate. A substrate is provided and a gate dielectric and a work function metal layer are formed thereon, wherein the work function metal layer is on the gate dielectric layer. Then, a top barrier layer is formed on the work function metal layer. The step of forming the top barrier layer includes increasing a concentration of a boundary protection material in the top barrier layer. Lastly, a metal layer is formed on the top barrier layer. The present invention further provides a semiconductor device having a metal gate.

Abstract translation: 本发明提供一种形成具有金属栅极的半导体器件的方法。 提供基板，并且在其上形成栅极电介质和功函数金属层，其中功函数金属层在栅极电介质层上。 然后，在功函数金属层上形成顶部阻挡层。 形成顶部阻挡层的步骤包括增加顶部阻挡层中边界保护材料的浓度。 最后，在顶部阻挡层上形成金属层。 本发明还提供一种具有金属栅极的半导体器件。

公开(公告)号：US20130334690A1

公开(公告)日：2013-12-19

申请号：US13495009

申请日：2012-06-13

Applicant: Min-Chuan Tsai ,  Hsin-Fu Huang ,  Chi-Mao Hsu ,  Chin-Fu Lin ,  Chien-Hao Chen ,  Wei-Yu Chen ,  Chi-Yuan Sun ,  Ya-Hsueh Hsieh ,  Tsun-Min Cheng

Inventor： Min-Chuan Tsai ,  Hsin-Fu Huang ,  Chi-Mao Hsu ,  Chin-Fu Lin ,  Chien-Hao Chen ,  Wei-Yu Chen ,  Chi-Yuan Sun ,  Ya-Hsueh Hsieh ,  Tsun-Min Cheng

IPC: H01L23/52 ,  H01L21/768

CPC classification number: H01L29/4966 ,  H01L21/28088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4958 ,  H01L29/512 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor structure includes a work function metal layer, a (work function) metal oxide layer and a main electrode. The work function metal layer is located on a substrate. The (work function) metal oxide layer is located on the work function metal layer. The main electrode is located on the (work function) metal oxide layer. Moreover a semiconductor process forming said semiconductor structure is also provided.

Abstract translation: 半导体结构包括功函数金属层，（功函数）金属氧化物层和主电极。 功函数金属层位于基板上。 （功函数）金属氧化物层位于功函数金属层上。 主电极位于（功函数）金属氧化物层上。 此外，还提供了形成所述半导体结构的半导体工艺。

公开(公告)号：US20130021778A1

公开(公告)日：2013-01-24

申请号：US13251302

申请日：2011-10-03

Applicant: Hsin-Fu Huang ,  Yu-Kai Huang

Inventor： Hsin-Fu Huang ,  Yu-Kai Huang

IPC: G09F13/04

CPC classification number: G06F1/1637 ,  G02F1/13338 ,  G02F2001/133314 ,  G02F2001/133325 ,  G02F2001/133331 ,  G02F2202/28 ,  G06F1/1626

Abstract: In a touch panel, a cover lens, a sensor unit, and a panel cell are assembled first via glue to form a panel component, where a concave portion is also formed at the side of the panel component. An assembling frame is used to extend into the concave portion and covering around the side and bottom of a backlight module so as to assemble the panel component with the backlight module. Wrapping tape and further fixtures that were used to combine the backlight module and the cell may be removed to reduce the overall cost of the touch panel, while the yield rate of the adhering process may be effectively promoted since the adhering process is done simply on glass components.

Abstract translation: 在触摸面板中，首先通过胶水组装覆盖透镜，传感器单元和面板单元以形成面板组件，其中在面板组件侧面还形成凹部。 使用组装框架延伸到凹部中并围绕背光模块的侧面和底部覆盖，以便将面板组件与背光模块组装。 可以除去用于组合背光模块和电池的包装胶带和其他固定装置，以降低触摸面板的整体成本，同时可以有效地促进粘附工艺的成品率，因为粘合工艺简单地在玻璃上完成 组件。

公开(公告)号：US07586558B2

公开(公告)日：2009-09-08

申请号：US10975668

申请日：2004-10-29

Applicant: Hsin Fu Huang ,  Chin Jing Chen

Inventor： Hsin Fu Huang ,  Chin Jing Chen

IPC: G02F1/1333 ,  G02F1/1335

CPC classification number: H01J61/35 ,  G02F1/133604 ,  H01J61/34

Abstract: A direct type backlight unit having liftable frame structure includes a housing, an upper frame and a plurality of lamps, wherein the plurality of lamps disposed on a cavity defined by the housing and at least one has a foggy region. The upper frame is configured to accommodate a plurality of optical films and a liquid crystal panel and has two clip members for engaging with two connection hole of the housing such that the upper frame can be easily fixed on the housing. A plurality of lamp connection units are disposed within the cavity and each includes a conductive clamp member for clamping the conductive electrode of the lamp, thereby facilitating the replacement of the lamps.

Abstract translation: 具有可升降框架结构的直立型背光单元包括壳体，上框架和多个灯，其中设置在由壳体限定的空腔中的多个灯具具有雾区域。 上框架被配置为容纳多个光学膜和液晶面板，并具有用于与壳体的两个连接孔接合的两个夹子构件，使得上框架可以容易地固定在壳体上。 多个灯连接单元设置在空腔内，并且每个包括用于夹持灯的导电电极的导电夹紧构件，从而便于更换灯。

公开(公告)号：USD499303S1

公开(公告)日：2004-12-07

申请号：US29189907

申请日：2003-09-12

Applicant: Hsin-Fu Huang

Designer： Hsin-Fu Huang

公开(公告)号：USD498642S1

公开(公告)日：2004-11-23

申请号：US29189908

申请日：2003-09-12

Applicant: Hsin-Fu Huang

Designer： Hsin-Fu Huang

公开(公告)号：US09006092B2

公开(公告)日：2015-04-14

申请号：US13288041

申请日：2011-11-03

Applicant: Kun-Hsien Lin ,  Chun-Hsien Lin ,  Hsin-Fu Huang

Inventor： Kun-Hsien Lin ,  Chun-Hsien Lin ,  Hsin-Fu Huang

IPC: H01L21/02 ,  H01L21/3205 ,  H01L21/8238 ,  H01L21/28 ,  H01L29/49 ,  H01L29/66 ,  H01L21/265 ,  H01L29/51

CPC classification number: H01L21/823842 ,  H01L21/265 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

Abstract: A semiconductor structure includes a substrate, a dielectric layer and a fluoride metal layer. The dielectric layer is located on the substrate. The fluoride metal layer is located on the dielectric layer. Furthermore, the present invention also provides a semiconductor process to form said semiconductor structure.

Abstract translation: 半导体结构包括基板，电介质层和氟化物金属层。 电介质层位于衬底上。 氟化金属层位于电介质层上。 此外，本发明还提供了形成所述半导体结构的半导体工艺。

公开(公告)号：US08860135B2

公开(公告)日：2014-10-14

申请号：US13401788

申请日：2012-02-21

Applicant: Chi-Mao Hsu ,  Hsin-Fu Huang ,  Min-Chuan Tsai ,  Chien-Hao Chen ,  Wei-Yu Chen ,  Chin-Fu Lin ,  Jing-Gang Li ,  Min-Hsien Chen ,  Jian-Hong Su

Inventor： Chi-Mao Hsu ,  Hsin-Fu Huang ,  Min-Chuan Tsai ,  Chien-Hao Chen ,  Wei-Yu Chen ,  Chin-Fu Lin ,  Jing-Gang Li ,  Min-Hsien Chen ,  Jian-Hong Su

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L21/76846 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/2855 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53223 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for filling a trench with a metal layer is disclosed. A deposition apparatus having a plurality of supporting pins is provided. A substrate and a dielectric layer disposed thereon are provided. The dielectric layer has a trench. A first deposition process is performed immediately after the substrate is placed on the supporting pins to form a metal layer in the trench, wherein during the first deposition process a temperature of the substrate is gradually increased to reach a predetermined temperature. When the temperature of the substrate reaches the predetermined temperature, a second deposition process is performed to completely fill the trench with the metal layer. The present invention further provides a semiconductor device having an aluminum layer with a reflectivity greater than 1, wherein the semiconductor device is formed by using the method.

Abstract translation: 公开了一种用金属层填充沟槽的方法。 提供具有多个支撑销的沉积装置。 设置有基板和介电层。 电介质层具有沟槽。 在将基板放置在支撑销上以在沟槽中形成金属层之后立即执行第一沉积工艺，其中在第一沉积工艺期间，基板的温度逐渐增加以达到预定温度。 当基板的温度达到预定温度时，执行第二沉积工艺以用金属层完全填充沟槽。 本发明还提供了具有大于1的反射率的铝层的半导体器件，其中通过使用该方法形成半导体器件。

公开(公告)号：US20130214336A1

公开(公告)日：2013-08-22

申请号：US13401788

申请日：2012-02-21

Applicant: Chi-Mao Hsu ,  Hsin-Fu Huang ,  Min-Chuan Tsai ,  Chien-Hao Chen ,  Wei-Yu Chen ,  Chin-Fu Lin ,  Jing-Gang Li ,  Min-Hsien Chen ,  Jian-Hong Su

Inventor： Chi-Mao Hsu ,  Hsin-Fu Huang ,  Min-Chuan Tsai ,  Chien-Hao Chen ,  Wei-Yu Chen ,  Chin-Fu Lin ,  Jing-Gang Li ,  Min-Hsien Chen ,  Jian-Hong Su

IPC: H01L29/78 ,  H01L29/45 ,  H01L21/768

CPC classification number: H01L21/76846 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/2855 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53223 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for filling a trench with a metal layer is disclosed. A deposition apparatus having a plurality of supporting pins is provided. A substrate and a dielectric layer disposed thereon are provided. The dielectric layer has a trench. A first deposition process is performed immediately after the substrate is placed on the supporting pins to form a metal layer in the trench, wherein during the first deposition process a temperature of the substrate is gradually increased to reach a predetermined temperature. When the temperature of the substrate reaches the predetermined temperature, a second deposition process is performed to completely fill the trench with the metal layer.

Abstract translation: 公开了一种用金属层填充沟槽的方法。 提供具有多个支撑销的沉积装置。 设置有基板和介电层。 电介质层具有沟槽。 在将基板放置在支撑销上以在沟槽中形成金属层之后立即执行第一沉积工艺，其中在第一沉积工艺期间，基板的温度逐渐增加以达到预定温度。 当基板的温度达到预定温度时，执行第二沉积工艺以用金属层完全填充沟槽。