发明申请
- 专利标题： CAVITY PROCESS ETCH UNDERCUT MONITOR
- 专利标题（中）： 空气流程监控
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申请号： US13411861申请日： 2012-03-05
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公开(公告)号： US20120223401A1公开(公告)日： 2012-09-06
- 发明人: Ricky Alan Jackson , Walter Baker Meinel , Karen Hildegard Ralston Kirmse
- 申请人： Ricky Alan Jackson , Walter Baker Meinel , Karen Hildegard Ralston Kirmse
- 申请人地址： US TX Dallas
- 专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址： US TX Dallas
- 主分类号： H01L29/84
- IPC分类号： H01L29/84 ; H01L21/02
摘要：
A MEMS device having a device cavity in a substrate has a cavity etch monitor proximate to the device cavity. An overlying layer including dielectric material is formed over the substrate. A monitor scale is formed in or on the overlying layer. Access holes are etched through the overlying layer and a cavity etch process forms the device cavity and a monitor cavity. The monitor scale is located over a lateral edge of the monitor cavity. The cavity etch monitor includes the monitor scale and monitor cavity, which allows visual measurement of a lateral width of the monitor cavity; the lateral dimensions of the monitor cavity being related to lateral dimensions of the device cavity.
公开/授权文献
- US08652971B2 Cavity process etch undercut monitor 公开/授权日：2014-02-18
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