发明申请
- 专利标题： METHODS OF FABRICATING A SEMICONDUCTOR MEMORY DEVICE
- 专利标题（中）： 制造半导体存储器件的方法
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申请号： US13400993申请日： 2012-02-21
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公开(公告)号： US20120225530A1公开(公告)日： 2012-09-06
- 发明人: Jong-Kyu KIM , Sangsup Jeong , Kukhan Yoon , Junsoo Lee , SungII Cho , Yong-Joon Choi
- 申请人： Jong-Kyu KIM , Sangsup Jeong , Kukhan Yoon , Junsoo Lee , SungII Cho , Yong-Joon Choi
- 优先权： KR10-2011-0019016 20110303
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/768
摘要：
A method of fabricating a semiconductor memory device includes forming a hard mask pattern using a damascene method on a lower mold layer stacked on a substrate and etching the lower mold layer using the hard mask pattern as an etch mask to define a protrusion under the hard mask pattern. A support pattern is formed on a top surface of the etched lower mold layer, the top surface of the etched lower mold layer being located at a lower level than a top surface of the protrusion. A lower electrode supported by the support pattern is formed.
公开/授权文献
- US08927384B2 Methods of fabricating a semiconductor memory device 公开/授权日：2015-01-06
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