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    METHODS OF FABRICATING A SEMICONDUCTOR MEMORY DEVICE
    2.
    发明申请
    METHODS OF FABRICATING A SEMICONDUCTOR MEMORY DEVICE 有权
    制造半导体存储器件的方法

    公开(公告)号：US20120225530A1

    公开(公告)日：2012-09-06

    申请号：US13400993

    申请日：2012-02-21

    申请人： Jong-Kyu KIM ,  Sangsup Jeong ,  Kukhan Yoon ,  Junsoo Lee ,  SungII Cho ,  Yong-Joon Choi

    发明人： Jong-Kyu KIM ,  Sangsup Jeong ,  Kukhan Yoon ,  Junsoo Lee ,  SungII Cho ,  Yong-Joon Choi

    IPC分类号： H01L21/02 ,  H01L21/768

    CPC分类号： H01L28/91 ,  H01L21/31144 ,  H01L27/0203 ,  H01L27/10817 ,  H01L27/10852

    摘要： A method of fabricating a semiconductor memory device includes forming a hard mask pattern using a damascene method on a lower mold layer stacked on a substrate and etching the lower mold layer using the hard mask pattern as an etch mask to define a protrusion under the hard mask pattern. A support pattern is formed on a top surface of the etched lower mold layer, the top surface of the etched lower mold layer being located at a lower level than a top surface of the protrusion. A lower electrode supported by the support pattern is formed.

    摘要翻译： 一种制造半导体存储器件的方法包括：使用镶嵌方法在堆叠在衬底上的下模层上形成硬掩模图案，并使用硬掩模图案蚀刻下模层作为蚀刻掩模，以在硬掩模之下限定突起 模式。 在蚀刻的下模层的顶表面上形成支撑图案，蚀刻的下模层的顶表面位于比突起的顶表面更低的水平。 形成由支撑图案支撑的下电极。

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING BOWING PREVENTION FILM
    3.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING BOWING PREVENTION FILM 审中-公开
    使用预防膜制造半导体器件的方法

    公开(公告)号：US20120225554A1

    公开(公告)日：2012-09-06

    申请号：US13409169

    申请日：2012-03-01

    申请人： Kukhan YOON ,  Cheolkyu LEE ,  Junsoo LEE ,  Jong-Kyu KIM ,  Seong-Mo KOO ,  Ki-jin PARK

    发明人： Kukhan YOON ,  Cheolkyu LEE ,  Junsoo LEE ,  Jong-Kyu KIM ,  Seong-Mo KOO ,  Ki-jin PARK

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76802 ,  H01L27/10814 ,  H01L27/10852 ,  H01L28/90

    摘要： A method of manufacturing a semiconductor device, the method including sequentially forming a lower material film, a middle material film, and an upper material film on a semiconductor substrate; and forming an opening that vertically penetrates the upper material film, the middle material film, and the lower material film by etching the upper material film, the middle material film, and the lower material film, wherein the middle material film and the upper material film are formed of material films having etch rates lower than an etch rate of the lower material film with respect to an etchant for etching the lower material film.

    摘要翻译： 一种制造半导体器件的方法，所述方法包括在半导体衬底上顺序地形成下部材料膜，中间材料膜和上部材料膜; 并且通过蚀刻上部材料膜，中间材料膜和下部材料膜形成垂直地穿透上部材料膜，中间材料膜和下部材料膜的开口，其中中间材料膜和上部材料膜 由具有低于下部材料膜相对于用于蚀刻下部材料膜的蚀刻剂的蚀刻速率的蚀刻速率的材料膜形成。