发明申请
- 专利标题: ABRASIVE, METHOD OF POLISHING TARGET MEMBER AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE
- 专利标题(中): 抛光,抛光方法及其制造方法
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申请号: US13411196申请日: 2012-03-02
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公开(公告)号: US20120227331A1公开(公告)日: 2012-09-13
- 发明人: Masato YOSHIDA , Toranosuke Ashizawa , Hiroki Terazaki , Yuuto Ootuki , Yasushi Kurata , Jun Matsuzawa , Kiyohito Tanno
- 申请人: Masato YOSHIDA , Toranosuke Ashizawa , Hiroki Terazaki , Yuuto Ootuki , Yasushi Kurata , Jun Matsuzawa , Kiyohito Tanno
- 优先权: JP09-349240 19971218; JP10-083042 19980330; JP10-083043 19980330
- 主分类号: C09G1/02
- IPC分类号: C09G1/02
摘要:
To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor which make use of this abrasive.