发明申请
US20120228673A1 FIELD-EFFECT TRANSISTOR, SEMICONDUCTOR WAFER, METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER
失效
场效应晶体管，半导体晶体管，生产场效应晶体管的方法和生产半导体晶体管的方法
- 专利标题： FIELD-EFFECT TRANSISTOR, SEMICONDUCTOR WAFER, METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER
- 专利标题（中）： 场效应晶体管，半导体晶体管，生产场效应晶体管的方法和生产半导体晶体管的方法
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申请号： US13413216申请日： 2012-03-06
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公开(公告)号： US20120228673A1公开(公告)日： 2012-09-13
- 发明人: Masahiko HATA , Hisashi Yamada , Noboru Fukuhara , Shinichi Takagi , Mitsuru Takenaka , Masafumi Yokoyama , Tetsuji Yasuda , Yuji Urabe , Noriyuki Miyata , Taro Itatani , Hiroyuki Ishii
- 申请人： Masahiko HATA , Hisashi Yamada , Noboru Fukuhara , Shinichi Takagi , Mitsuru Takenaka , Masafumi Yokoyama , Tetsuji Yasuda , Yuji Urabe , Noriyuki Miyata , Taro Itatani , Hiroyuki Ishii
- 申请人地址： JP Tokyo JP Tokyo JP Tokyo
- 专利权人： SUMITOMO CHEMICAL COMPANY,National Institute of Advanced Industrial Science and Technology,The University of Tokyo
- 当前专利权人： SUMITOMO CHEMICAL COMPANY,National Institute of Advanced Industrial Science and Technology,The University of Tokyo
- 当前专利权人地址： JP Tokyo JP Tokyo JP Tokyo
- 优先权： JP2009-205890 20090907
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336 ; H01L21/20
摘要：
Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of Inx1Ga1-x1Asy1P1-y1 (0
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