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1.发明申请SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE, AND PROCESS FOR PRODUCING SEMICONDUCTOR SUBSTRATE 审中-公开半导体器件，用于制造半导体器件的工艺，半导体衬底和用于生产半导体衬底的工艺公开(公告)号：US20110233689A1
公开(公告)日：2011-09-29
申请号：US13133092
申请日：2009-11-27
申请人： Masahiko Hata , Noboru Fukuhara , Hisashi Yamada , Shinichi Takagi , Masakazu Sugiyama , Mitsuru Takenaka , Tetsuji Yasuda , Noriyuki Miyata , Taro Itatani , Hiroyuki Ishii , Akihiro Ohtake , Jun Nara
发明人： Masahiko Hata , Noboru Fukuhara , Hisashi Yamada , Shinichi Takagi , Masakazu Sugiyama , Mitsuru Takenaka , Tetsuji Yasuda , Noriyuki Miyata , Taro Itatani , Hiroyuki Ishii , Akihiro Ohtake , Jun Nara
IPC分类号： H01L29/78 , H01L29/04 , H01L21/336 , H01L29/20 , H01L21/20
CPC分类号： H01L29/045 , H01L29/20 , H01L29/7833 , H01L29/78681
摘要： There is provided a semiconductor device that includes a III-V Group compound semiconductor having a zinc-blende-type crystal structure, an insulating material being in contact with the (111) plane of the III-V Group compound semiconductor, a plane of the III-V Group compound semiconductor equivalent to the (111) plane, or a plane that has an off angle with respect to the (111) plane or the plane equivalent to the (111) plane, and an MIS-type electrode being in contact with the insulating material and including a metal conductive material.
摘要翻译： 提供了一种半导体器件，其包括具有锌闪光体型晶体结构的III-V族化合物半导体，与III-V族化合物半导体的（111）面接触的绝缘材料， 相当于（111）面的III-V族化合物半导体，或相对于（111）面或与（111）面相当的面的偏角的平面，和与MIS接触的MIS型电极 具有绝缘材料并且包括金属导电材料。
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公开(公告)号：US5945720A
公开(公告)日：1999-08-31
申请号：US900826
申请日：1997-07-25
IPC分类号： H01L31/0232 , H01L31/108
CPC分类号： H01L31/108 , H01L31/0232
摘要： A high-speed, high-sensitivity photo-receiving device has a light-absorbing substrate, on which a pair of electrodes are provided. An insulative optical guide is located over an exposed surface portion of the substrate constituting an optical window. The optical guide is permeable to incident light, and the width of the optical guide does not exceed the wavelength of the incident light.
摘要翻译： 高速，高灵敏度的光接收装置具有光吸收基板，在其上设置有一对电极。 绝缘光导件位于构成光学窗口的基板的暴露表面部分的上方。 光导通透入入射光，光导的宽度不超过入射光的波长。
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3.发明授权
公开(公告)号：US5737082A
公开(公告)日：1998-04-07
申请号：US506385
申请日：1995-07-24
CPC分类号： G01R15/242 , G01J4/00
摘要： An apparatus of measuring an electric signal comprises a laser device, optical elements, an electrooptic crystal, a photoelectric converter, and an electric circuit. The electrooptic crystal is selected from the materials in the type of having properties of changing its refractive index in the direction of its optic major axes and the direction of these axes by a function of an applied electric field. In the apparatus, the electrooptic crystal is placed in the electric field applied by an electric circuit under measurement. A laser beam emitted from the laser device is incident on the electrooptic crystal. A reflected light passed through the crystal is resolved into rays in two polarized direction. Each ray is subjected to a photoelectric conversion by passing through the photoelectric converter and exerted as an electric output. A differential signal of the electric output is defined as a measurement signal. By selecting two polarized directions of the laser beam by a half-wave plate as the optical element, two signals corresponding to the changes in the refractive index and optic major axes of the crystal. Two component of a vector of the electric field can be obtained by a first order combination of these signals.
摘要翻译： 测量电信号的装置包括激光装置，光学元件，电光晶体，光电转换器和电路。 电光晶体选自具有通过施加的电场的函数在其光学主轴的方向上改变其折射率的特性的类型的材料和这些轴的方向。 在该装置中，将电光晶体放置在由测量电路施加的电场中。 从激光装置发射的激光束入射到电光晶体上。 通过晶体的反射光在两个偏振方向被分解为光线。 每个射线通过光电转换器进行光电转换并作为电输出施加。 电输出的差分信号被定义为测量信号。 通过用半波片选择激光束的两个偏振方向作为光学元件，对应于晶体的折射率和光学主轴的变化的两个信号。 可以通过这些信号的一阶组合来获得电场矢量的两个分量。
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4.发明授权公开(公告)号：US08835906B2
公开(公告)日：2014-09-16
申请号：US13310522
申请日：2011-12-02
IPC分类号： H01L31/0352 , H01L31/18 , H01L31/103 , H01L27/144 , H01L31/052 , H01L31/0392 , G01J5/02
CPC分类号： H01L27/1446 , G01J5/024 , H01L31/0392 , H01L31/0543 , H01L31/1035 , H01L31/1852 , Y02E10/52 , Y02E10/544 , Y02P70/521
摘要： A sensor includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat, where the photothermal absorber outputs an electric signal in response to incident light to be introduced into the photothermal absorber or heat to be applied to the photothermal absorber. A semiconductor wafer includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat.
摘要翻译： 传感器包括：含有硅的基底晶片; 种子构件直接或间接地设置在基底晶片上; 以及由第3-5族化合物半导体晶格匹配或伪晶格匹配种子构件并且能够在吸收光或热时产生载体的光热吸收体，其中光热吸收体输出响应于 入射到光热吸收器中的入射光或被加到光热吸收器上的热量。 半导体晶片包括：含有硅的基底晶片; 种子构件直接或间接地设置在基底晶片上; 以及由3-5族化合物半导体晶格匹配或伪晶格匹配种子构件制成并且能够在吸收光或热时产生载体的光热吸收剂。
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公开(公告)号：US07345326B2
公开(公告)日：2008-03-18
申请号：US10514721
申请日：2002-05-24
申请人： Taro Itatani , Shuichi Yagi
发明人： Taro Itatani , Shuichi Yagi
IPC分类号： H01L29/778
摘要： An electric signal transmission line includes a signal electrode portion, a ground electrode portion and a dielectric portion formed on a semiconductor substrate. The signal electrode portion has a metal electrode through which an electric signals flows. The ground electrode portion has a grounded metal electrode. The metal electrode of the signal electrode portion and the metal electrode of the ground electrode portion are connected with a semiconductor PN junction. The dielectric portion is formed by using a dielectric to cover a region between the metal electrode of the signal electrode portion and the metal electrode of the ground electrode portion through which a line of electric force runs and is a region in which energy of transmitted electric signals exist.
摘要翻译： 电信号传输线包括信号电极部分，接地电极部分和形成在半导体衬底上的电介质部分。 信号电极部具有电信号流过的金属电极。 接地电极部分具有接地的金属电极。 信号电极部的金属电极和接地电极部的金属电极与半导体PN结连接。 电介质部分是通过使用电介质来覆盖信号电极部分的金属电极和接地电极部分的金属电极之间的区域，电力线通过该区域运行，并且是传输电信号的能量的区域 存在。
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6.发明授权公开(公告)号：US06861848B2
公开(公告)日：2005-03-01
申请号：US10279846
申请日：2002-10-25
CPC分类号： G01D5/24 , G01D5/2417 , H01S3/105
摘要： A capacitance position sensor includes a pair of opposed tabular electrodes, an LC oscillator circuit having a toroidal core winding and whose oscillating frequency varies with change in capacitance between the pair of electrodes, and an arithmetic processing unit for calculating an absolute value of a distance between the electrodes from the oscillating frequency of the oscillator circuit. A position controller includes a stationary member formed with one electrode of the pair of electrodes of the position sensor, a movable member on which the other electrode of the pair of electrodes is formed, and moving device for moving the movable member relative to the stationary member.
摘要翻译： 电容位置传感器包括一对相对的平板电极，具有环形铁芯绕组的振荡频率随着一对电极之间的电容变化而变化的LC振荡器电路，以及运算处理单元，用于计算在一对电极之间的距离的绝对值 电极从振荡电路的振荡频率。 位置控制器包括：固定构件，其形成有位置传感器的一对电极的一个电极，形成有该对电极的另一个电极的可动构件;以及用于使可动构件相对于固定构件移动的移动装置 。
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7.发明申请公开(公告)号：US20120138898A1
公开(公告)日：2012-06-07
申请号：US13310522
申请日：2011-12-02
IPC分类号： H01L31/0352
CPC分类号： H01L27/1446 , G01J5/024 , H01L31/0392 , H01L31/0543 , H01L31/1035 , H01L31/1852 , Y02E10/52 , Y02E10/544 , Y02P70/521
摘要： A sensor includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat, where the photothermal absorber outputs an electric signal in response to incident light to be introduced into the photothermal absorber or heat to be applied to the photothermal absorber. A semiconductor wafer includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat.
摘要翻译： 传感器包括：含有硅的基底晶片; 种子构件直接或间接地设置在基底晶片上; 以及由第3-5族化合物半导体晶格匹配或伪晶格匹配种子构件并且能够在吸收光或热时产生载体的光热吸收体，其中光热吸收体输出响应于 入射到光热吸收器中的入射光或被加到光热吸收器上的热量。 半导体晶片包括：含有硅的基底晶片; 种子构件直接或间接地设置在基底晶片上; 以及由3-5族化合物半导体晶格匹配或伪晶格匹配种子构件制成并且能够在吸收光或热时产生载体的光热吸收剂。
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8.发明申请SEMICONDUCTOR WAFER, PHOTOELECTRIC CONVERSION DEVICE, METHOD OF PRODUCING SEMICONDUCTOR WAFER, AND METHOD OF PRODUCING PHOTOELECTRIC CONVERSION DEVICE 有权半导体晶体管，光电转换元件，半导体晶体管的制造方法及光电转换元件的制造方法公开(公告)号：US20120074463A1
公开(公告)日：2012-03-29
申请号：US13310614
申请日：2011-12-02
申请人： Masahiko HATA , Taro ITATANI
发明人： Masahiko HATA , Taro ITATANI
IPC分类号： H01L31/0264 , H01L21/20 , H01L31/18 , H01L29/12
CPC分类号： H01L31/0522 , H01L27/142 , H01L31/028 , H01L31/03046 , H01L31/0392 , H01L31/0475 , H01L31/0543 , H01L31/0687 , H01L31/076 , H01L31/077 , H01L31/1852 , Y02E10/52 , Y02E10/544 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Provided is a semiconductor wafer including: a base wafer containing silicon; an inhibitor that has been formed on the base wafer, has an aperture in which a surface of the base wafer is exposed, and inhibits crystal growth; and a light-absorptive structure that has been formed inside the aperture in contact with a surface of the base wafer exposed inside the aperture, where the light-absorptive structure includes a first semiconductor and a second semiconductor.
摘要翻译： 提供一种半导体晶片，其包括：含有硅的基底晶片; 已经形成在基底晶片上的抑制剂具有露出基底晶片的表面的孔，并抑制晶体生长; 以及已经形成在所述孔内的与所述孔内露出的所述基底晶片的表面接触的光吸收结构，其中所述光吸收结构包括第一半导体和第二半导体。
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9.发明授权Optical apparatus, optical apparatus adjustment method, and storage medium recorded with a processing program that executes said adjustment method 失效光学装置，光学装置调整方法以及记录有执行所述调整方法的处理程序的存储介质公开(公告)号：US06879388B2
公开(公告)日：2005-04-12
申请号：US10866113
申请日：2004-06-14
申请人： Yuji Kasai , Masahiro Murakawa , Taro Itatani , Tetsuya Higuchi
发明人： Yuji Kasai , Masahiro Murakawa , Taro Itatani , Tetsuya Higuchi
IPC分类号： G06F15/18 , G02B7/00 , G02B23/02 , G02B27/62 , G06N3/00 , H01S3/06 , H01S3/086 , H01S3/139 , G01B11/26
摘要： An optical apparatus has an adjustment apparatus 5 and an optical unit 1 including a plurality of optical elements. The adjustment apparatus sequentially provides control signals that, according to a probabilistic search technique, change the parameters of a stipulated plurality of optical elements among the optical elements to become parameters that cause the functions of the optical apparatus to satisfy stipulated specifications. A method of adjusting the optical apparatus includes sequentially providing control signals that, according to a probabilistic search technique, change the parameters of the stipulated plurality of optical elements among the optical elements, and searching for optical values at which the functions of the optical apparatus the stipulated specification.
摘要翻译： 光学装置具有调整装置5和包括多个光学元件的光学单元1。 调整装置顺序地提供控制信号，根据概率检索技术，改变光学元件中规定的多个光学元件的参数，成为使光学装置的功能满足规定规格的参数。 调整光学装置的方法包括依次提供控制信号，根据概率检索技术，改变光学元件中规定的多个光学元件的参数，并且搜索光学装置的功能的光学值 规定的规格。
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公开(公告)号：US06781682B1
公开(公告)日：2004-08-24
申请号：US09536620
申请日：2000-03-28
申请人： Yuji Kasai , Masahiro Murakawa , Taro Itatani , Tetsuya Higuchi
发明人： Yuji Kasai , Masahiro Murakawa , Taro Itatani , Tetsuya Higuchi
IPC分类号： G01B1126
摘要： An optical apparatus has an adjustment apparatus 5 and an optical unit 1 including a plurality of optical elements. The adjustment apparatus sequentially provides control signals that, according to a probabilistic search technique, change the parameters of a stipulated plurality of optical elements among the optical elements to become parameters that cause the functions of the optical apparatus to satisfy stipulated specifications. A method of adjusting the optical apparatus includes sequentially providing control signals that, according to a probabilistic search technique, change the parameters of the stipulated plurality of optical elements among the optical elements, and searching for optical values at which the functions of the optical apparatus the stipulated specification.
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