发明申请
- 专利标题： SEMICONDUCTOR MODULE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 半导体模块及其制造方法
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申请号： US13235386申请日： 2011-09-18
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公开(公告)号： US20120228755A1公开(公告)日： 2012-09-13
- 发明人: Toshihiko NAGANO , Hiroshi Yamada , Kazuhide Abe , Kazuhiko Itaya , Taihei Nakada
- 申请人： Toshihiko NAGANO , Hiroshi Yamada , Kazuhide Abe , Kazuhiko Itaya , Taihei Nakada
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-050842 20110308
- 主分类号： H01L23/053
- IPC分类号： H01L23/053 ; H01L21/56
摘要：
A semiconductor module includes a high frequency chip, an insulating cap, a through electrode, interconnections, and an insulating layer. The insulating cap forms a hollow with the chip to cover the chip. The through electrode passes through a first plane of the cap and a second plane of the cap, the first plane facing the chip, the second plane being on a side opposite to the first plane. The interconnections are provided on the cap and connected to the through electrode. The insulating layer is provided on the cap and fills a portion between the interconnections therewith.
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