发明申请
- 专利标题: ION SOURCE
- 专利标题(中): 离子源
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申请号: US13416369申请日: 2012-03-09
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公开(公告)号: US20120229012A1公开(公告)日: 2012-09-13
- 发明人: Yutaka Inouchi , Takeshi Matsumoto , Masahiro Tanii , Katsuharu Imai
- 申请人: Yutaka Inouchi , Takeshi Matsumoto , Masahiro Tanii , Katsuharu Imai
- 申请人地址: JP Kyoto
- 专利权人: NISSIN ION EQUIPMENT CO., LTD.
- 当前专利权人: NISSIN ION EQUIPMENT CO., LTD.
- 当前专利权人地址: JP Kyoto
- 优先权: JP2011-053396 20110310
- 主分类号: H01J27/02
- IPC分类号: H01J27/02
摘要:
An ion source includes a plasma generation chamber, at least one filament disposed inside the plasma generation chamber, at least one electrode disposed so as to be opposed to the plasma generation chamber, and configured to extract out an ion beam from the plasma generation chamber, and a plurality of permanent magnets disposed outside the plasma generation chamber, and configured to form cusped magnetic fields inside the plasma generation chamber, and a deposition preventive plate disposed parallel with an inner surface of a wall of the plasma generation chamber. The deposition preventive plate has recesses which are formed at such positions as to be opposed to the respective permanent magnets with the wall of the plasma generation chamber interposed in between.