发明申请
- 专利标题: SEMICONDUCTOR INTEGRATED CIRCUIT AND HIGH FREQUENCY MODULE WITH THE SAME
- 专利标题(中): 半导体集成电路及其高频模块
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申请号: US13419194申请日: 2012-03-13
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公开(公告)号: US20120229192A1公开(公告)日: 2012-09-13
- 发明人: Kaoru KATOH , Shigeki KOYA , Shinichiro TAKATANI , Yasushi SHIGENO , Akishige NAKAJIMA , Takashi OGAWA
- 申请人: Kaoru KATOH , Shigeki KOYA , Shinichiro TAKATANI , Yasushi SHIGENO , Akishige NAKAJIMA , Takashi OGAWA
- 专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人: RENESAS ELECTRONICS CORPORATION
- 优先权: JP2008-287921 20081110
- 主分类号: H03K17/687
- IPC分类号: H03K17/687
摘要:
A semiconductor integrated circuit which reduces an increase in the level of a harmonic signal of an RF transmission output signal at the time of supplying an RF transmission signal to a bias generation circuit of an antenna switch, including an antenna switch having a bias generation circuit, a transmitter switch, and a receiver switch. The on/off state of a transistor of the transmitter switch coupled between a transmitter port and an I/O port is controlled by a transmit control bias. The on/off state of the transistors of the receiver switch coupled between the I/O port and a receiver port is controlled by a receiver control bias. An RF signal input port of the bias generation circuit is coupled to the transmit port, and a negative DC output bias generated from a DC output port is supplied to a gate control port of transistors of the receiver switch.
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