发明申请
US20120235098A1 CHALCOGEN COMPOUND POWDER, CHALCOGEN COMPOUND PASTE, PROCESS FOR PRODUCING CHALCOGEN COMPOUND POWDER, AND PROCESS FOR PRODUCING CHALCOGEN COMPOUND PASTE
审中-公开
CHALCOGEN化合物粉末，CHALCOGEN化合物浆料，生产聚氨酯复合粉末的方法，以及生产聚合化合物浆料的方法
- 专利标题： CHALCOGEN COMPOUND POWDER, CHALCOGEN COMPOUND PASTE, PROCESS FOR PRODUCING CHALCOGEN COMPOUND POWDER, AND PROCESS FOR PRODUCING CHALCOGEN COMPOUND PASTE
- 专利标题（中）： CHALCOGEN化合物粉末，CHALCOGEN化合物浆料，生产聚氨酯复合粉末的方法，以及生产聚合化合物浆料的方法
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申请号： US13501306申请日： 2010-12-07
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公开(公告)号： US20120235098A1公开(公告)日： 2012-09-20
- 发明人: Yuichi Ishikawa , Koji Tanoue , Takatoshi Fujino
- 申请人： Yuichi Ishikawa , Koji Tanoue , Takatoshi Fujino
- 国际申请： PCT/JP2010/072319 WO 20101207
- 主分类号： H01B1/00
- IPC分类号： H01B1/00 ; H01B1/20 ; B32B5/16 ; B82Y40/00 ; B82Y30/00
摘要：
Chalcogen compound powder containing Cu—In—Ga—Se and having an average particle diameter (DSEM) of 80 nm or less and a low content of carbon is obtained by forming a mixed solvent by mixing together at least any one of a mixture of copper salt and indium salt, a composite hydroxide of copper and indium, and a composite oxide of copper and indium, any one of selenium and a selenium compound, and a solvent having a boiling point of 250° C. or less, and heating the mixed solvent to a temperature of 220° C. to 500° C. A thin film containing Cu—In—Ga—Se and having low resistance is obtained by using paste of the chalcogen compound powder.
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