发明申请
US20120236892A1 LASERS WITH INGAAS(P) QUANTUM WELLS WITH INDIUM INGAP BARRIER LAYERS WITH REDUCED DECOMPOSITION
有权
带有INGAAS（P）量子阱的激光器，具有减少分解的带有阴离子阻挡层的层
- 专利标题： LASERS WITH INGAAS(P) QUANTUM WELLS WITH INDIUM INGAP BARRIER LAYERS WITH REDUCED DECOMPOSITION
- 专利标题（中）： 带有INGAAS（P）量子阱的激光器，具有减少分解的带有阴离子阻挡层的层
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申请号： US13423826申请日： 2012-03-19
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公开(公告)号： US20120236892A1公开(公告)日： 2012-09-20
- 发明人: Ralph H. Johnson , Jerome K. Wade
- 申请人： Ralph H. Johnson , Jerome K. Wade
- 申请人地址： US CA Sunnyvale
- 专利权人： FINISAR CORPORATION
- 当前专利权人： FINISAR CORPORATION
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： H01S5/183
- IPC分类号： H01S5/183 ; H01L21/02 ; B82Y99/00
摘要：
A method for preparing a VCSEL can use MBE for: growing a first conduction region over a first mirror region; growing an active region over the first conduction region opposite of the first mirror region, including: (a) growing a quantum well barrier having In1-xGaxP(As); (b) growing an transitional layer having one or more of GaP, GaAsP, or GaAs; (c) growing a quantum well layer having In1-zGazAsyP1-y; (d) growing another transitional layer have one or more of GaP, GaAsP, or GaAs; (e) repeating processes (a) through (d) over a plurality of cycles; and (f) growing a quantum well barrier having In1-xGaxP(As); growing a second conduction region over the active region opposite of the first conduction region, wherein: x ranges from 0.77 to 0.50; y ranges from 0.7 to 1; and z ranges from 0.7 to 0.99.