Invention Application
- Patent Title: SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
- Patent Title (中): 半导体发光器件及其制造方法
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Application No.: US13424687Application Date: 2012-03-20
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Publication No.: US20120241792A1Publication Date: 2012-09-27
- Inventor: Susumu Obata , Kazuhito Higuchi , Hideo Nishiuchi , Akiya Kimura , Toshiya Nakayama , Yoshiaki Sugizaki , Akihiro Kojima , Yosuke Akimoto
- Applicant: Susumu Obata , Kazuhito Higuchi , Hideo Nishiuchi , Akiya Kimura , Toshiya Nakayama , Yoshiaki Sugizaki , Akihiro Kojima , Yosuke Akimoto
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Priority: JP2011-064909 20110323; JP2012-052247 20120308
- Main IPC: H01L33/60
- IPC: H01L33/60 ; H01L33/00

Abstract:
According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.
Public/Granted literature
- US08614455B2 Semiconductor light emitting device Public/Granted day:2013-12-24
Information query
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