发明申请
- 专利标题: THERMAL TREATMENT METHOD OF SILICON WAFER AND SILICON WAFER
- 专利标题(中): 硅波和硅波的热处理方法
-
申请号: US13421748申请日: 2012-03-15
-
公开(公告)号: US20120241912A1公开(公告)日: 2012-09-27
- 发明人: Takeshi SENDA , Koji Araki
- 申请人: Takeshi SENDA , Koji Araki
- 申请人地址: JP Tokyo
- 专利权人: Covalent Materials Corporation
- 当前专利权人: Covalent Materials Corporation
- 当前专利权人地址: JP Tokyo
- 优先权: JP2011-062575 20110322; JP2011-208810 20110926
- 主分类号: H01L29/34
- IPC分类号: H01L29/34 ; H01L21/306
摘要:
There is provided a thermal treatment method of a silicon wafer. The method includes the successive steps of: (a) terminating silicon atoms existing on an active surface of the silicon wafer with hydrogen, wherein the active surface is mirror-polished, and a semiconductor device is to be formed on the active surface; (b) terminating the silicon atoms existing on the active surface of the silicon wafer with fluorine; (c) rapidly heating the silicon wafer to a first temperature under an inert gas atmosphere or a reducing gas atmosphere, wherein the first temperature is in a range of 1300° C. to 1400° C.; (d) holding the silicon wafer at the first temperature for a certain time; and (e) rapidly cooling the silicon wafer.
公开/授权文献
- US09059099B2 Thermal treatment method of silicon wafer and silicon wafer 公开/授权日:2015-06-16