公开(公告)号：US08999864B2

公开(公告)日：2015-04-07

申请号：US13322080

申请日：2010-05-28

申请人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Hiroyuki Saito

发明人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Hiroyuki Saito

IPC分类号： H01L21/26 ,  H01L21/00 ,  H01L21/322

CPC分类号： H01L21/3225 ,  Y10S438/928

摘要： A silicon wafer for preventing a void defect in a bulk region from becoming source of contamination and slip generation in a device process is provided. And a heat-treating method thereof for reducing crystal defects such as COP in a region near the wafer surface to be a device active region is provided. The silicon wafer has a surface region 1 which is a defect-free region and a bulk region 2 including void defect of a polyhedron whose basic shape is an octahedron in which a corner portion of the polyhedron is in the curved shape and an inner-wall oxide film the void defect is removed. The silicon wafer is provided by performing a heat-treating method in which gas to be supplied, inner pressure of spaces and a maximum achievable temperature are set to a predetermined value when subjecting the silicon wafer produced by a CZ method to RTP.

摘要翻译： 提供了一种用于防止大块区域中的空隙缺陷成为装置处理中的污染源和滑移产生的硅晶片。 并且提供了一种用于在晶片表面附近的区域中减少诸如COP之类的晶体缺陷的热处理方法作为器件有源区。 硅晶片具有作为无缺陷区域的表面区域1和包括多面体的空隙的主体区域2，其基本形状为八面体，多面体的角部为弯曲形状，内壁 氧化膜去除空隙缺陷。 通过进行热处理方法来提供硅晶片，当将通过CZ方法制造的硅晶片经受RTP时，将待供给的气体，空间的内部压力和最大可实现温度设定为预定值。

公开(公告)号：US08252700B2

公开(公告)日：2012-08-28

申请号：US12656232

申请日：2010-01-21

申请人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

发明人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C30B33/02 ,  C30B29/06 ,  C30B33/005 ,  H01L21/3225 ,  H01L21/324 ,  H01L21/67109

摘要： In a method of heat treating a wafer obtained by slicing a silicon single crystal ingot manufactured by the Czochralski method, a rapid heating/cooling heat treatment is carried out by setting a holding time at an ultimate temperature of 1200° C. or more and a melting point of silicon or less to be equal to or longer than one second and to be equal to or shorter than 60 seconds in a mixed gas atmosphere containing oxygen having an oxygen partial pressure of 1.0% or more and 20% or less and argon, and an oxide film having a thickness of 9.1 nm or less or 24.3 nm or more is thus formed on a surface of the silicon wafer.

摘要翻译： 在通过切片由切克劳斯基法制造的硅单晶锭进行切片而得到的晶片的热处理方法中，通过将保持时间设定为1200℃以上的最终温度，进行快速加热/冷却热处理， 在含有氧分压为1.0％以上且20％以下的氧和氩气的混合气体气氛中，硅的熔点以下等于或大于1秒且等于或小于60秒， 因此在硅晶片的表面上形成厚度为9.1nm以下或24.3nm以上的氧化膜。

公开(公告)号：US20100055884A1

公开(公告)日：2010-03-04

申请号：US12512229

申请日：2009-07-30

申请人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

发明人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

IPC分类号： H01L21/20

CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B33/02 ,  H01L21/3225

摘要： In a manufacturing method for a silicon wafer, a first heat treatment process is performed on the silicon wafer while introducing a first gas having an oxygen gas in an amount of 0.01 vol. % or more and 1.00 vol. % or less and a rare gas, and a second heat treatment process is performed while stopping introducing the first gas and introducing a second gas having an oxygen gas in an amount of 20 vol. % or more and 100 vol. % or less and a rare gas. In the first heat treatment process, the silicon wafer is rapidly heated to first temperature of 1300° C. or higher and a melting point of silicon or lower at a first heating rate, and kept at the first temperature. In the second heat treatment process, the silicon wafer is kept at the first temperature, and rapidly cooled from the first temperature at a first cooling rate.

摘要翻译： 在硅晶片的制造方法中，在硅晶片上进行第一热处理工艺，同时引入具有0.01体积％的氧气的第一气体。 ％以上1.00体积％ ％以下和稀有气体，并且在停止引入第一气体并引入具有20体积％的氧气的第二气体的同时进行第二热处理工艺。 ％以上100体积％ ％以下，稀有气体。 在第一热处理工艺中，将硅晶片以第一加热速率快速加热到1300℃或更高的第一温度和硅的熔点或更低，并保持在第一温度。 在第二热处理工艺中，将硅晶片保持在第一温度，并以第一冷却速度从第一温度快速冷却。

公开(公告)号：US20070240628A1

公开(公告)日：2007-10-18

申请号：US11697097

申请日：2007-04-05

申请人： Takashi Watanabe ,  Hiroyuki Saito ,  Takeshi Senda ,  Koji Izunome ,  Kazuhiko Kashima

发明人： Takashi Watanabe ,  Hiroyuki Saito ,  Takeshi Senda ,  Koji Izunome ,  Kazuhiko Kashima

IPC分类号： C30B15/14 ,  H01L21/00 ,  C30B15/00

CPC分类号： C30B29/06 ,  C30B33/02 ,  H01L21/3225

摘要： Provided is a silicon wafer suitable for manufacturing a semiconductor device having a shallow junction. A silicon wafer wherein, in a region at a depth of less than 50 μm from a surface, a density of oxygen deposition materials each having a diameter of not less than 10 nm is not more than 1×108/cm3. A silicon wafer for a semiconductor device, which is manufactured by applying heat treatment at a heat treatment temperature of not less than 1000° C. for heat treatment time of not more than 3 msec, wherein, in a region at a depth of less than 50 μm from a surface, a density of oxygen deposition materials each having a diameter of not less than 10 nm is not more than 1×108/cm3.

摘要翻译： 提供了适合于制造具有浅结的半导体器件的硅晶片。 一种硅晶片，其中在距离表面小于50μm的深度的区域中，每个直径不小于10nm的氧沉积材料的密度不大于1×10 8 / cm 3。 一种用于半导体器件的硅晶片，其通过在不低于1000℃的热处理温度下进行热处理而不超过3毫秒的热处理时间进行热处理，其中在深度小于 50μm的表面，每个直径不小于10nm的氧沉积材料的密度不大于1×10 8 / cm 3。

公开(公告)号：US07247583B2

公开(公告)日：2007-07-24

申请号：US11038180

申请日：2005-01-21

申请人： Hisatsugu Kurita ,  Masato Igarashi ,  Takeshi Senda ,  Koji Izunome

发明人： Hisatsugu Kurita ,  Masato Igarashi ,  Takeshi Senda ,  Koji Izunome

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/336 ,  H01L21/8234

CPC分类号： C30B29/06 ,  C30B25/18 ,  C30B29/52

摘要： A method for manufacturing a strained silicon wafer, having steps of a first step of preparing a single crystal silicon substrate, a second step of forming a graded SiGe layer on the substrate, the graded SiGe layer having a first Ge composition ratio increased stepwisely from 5 to 60% at atomic ratio, a third step of forming a SiGe constant composition layer on the graded SiGe layer, the SiGe constant composition layer having a Ge composition ratio substantially equal to the Ge composition ratio on a surface of the-graded SiGe layer and a fourth step of forming a strained Si layer on the SiGe constant composition layer. The second through fourth steps are performed under the reduced pressure atmosphere while the single crystal silicon substrate is rotated in a circumferential direction at a rate from 300 rpm to 1500 rpm.

摘要翻译： 一种制造应变硅晶片的方法，具有制备单晶硅衬底的第一步骤的步骤，在衬底上形成渐变SiGe层的第二步骤，具有第一Ge组成比的渐变SiGe层从5度逐步增加 至60％原子比的第三步骤，在渐变SiGe层上形成SiGe常数组成层的第三步骤，具有Ge组分比基本上等于Ge组分比的GeGe组成比在SiGe层的表面上的第三步骤和 在SiGe恒定组成层上形成应变Si层的第四步骤。 第二至第四步骤在减压气氛下进行，而单晶硅衬底以圆周方向以300rpm至1500rpm的速度旋转。

公开(公告)号：US07060597B2

公开(公告)日：2006-06-13

申请号：US10847305

申请日：2004-05-18

申请人： Hisatsugu Kurita ,  Masato Igarashi ,  Takeshi Senda ,  Koji Izunome

发明人： Hisatsugu Kurita ,  Masato Igarashi ,  Takeshi Senda ,  Koji Izunome

IPC分类号： H01L21/20

CPC分类号： H01L29/1054 ,  C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  C30B29/06 ,  C30B29/52 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02658 ,  H01L21/02661 ,  H01L21/324 ,  H01L29/7842

摘要： A manufacturing method for a silicon substrate having a strained layer, has steps of forming a plurality of atomic steps having a height of 0.1 nm or more on the surface of a silicon substrate, forming a plurality of terraces having a width of 0.1 μm or more between the plurality of atomic steps and forming a SiGe layer or a SiGe layer and a Si layer on the silicon substrate.

摘要翻译： 具有应变层的硅基板的制造方法具有在硅基板的表面上形成高度为0.1nm以上的多个原子台阶的步骤，形成宽度为0.1μm以上的多个台阶 在多个原子台阶之间并在硅衬底上形成SiGe层或SiGe层和Si层。

公开(公告)号：US09059099B2

公开(公告)日：2015-06-16

申请号：US13421748

申请日：2012-03-15

申请人： Takeshi Senda ,  Koji Araki

发明人： Takeshi Senda ,  Koji Araki

IPC分类号： H01L21/322 ,  H01L21/324 ,  H01L21/306 ,  H01L21/02

CPC分类号： H01L21/306 ,  H01L21/0201 ,  H01L21/3225

摘要： There is provided a thermal treatment method of a silicon wafer. The method includes the successive steps of: (a) terminating silicon atoms existing on an active surface of the silicon wafer with hydrogen, wherein the active surface is mirror-polished, and a semiconductor device is to be formed on the active surface; (b) terminating the silicon atoms existing on the active surface of the silicon wafer with fluorine; (c) rapidly heating the silicon wafer to a first temperature under an inert gas atmosphere or a reducing gas atmosphere, wherein the first temperature is in a range of 1300° C. to 1400° C.; (d) holding the silicon wafer at the first temperature for a certain time; and (e) rapidly cooling the silicon wafer.

摘要翻译： 提供了硅晶片的热处理方法。 该方法包括以下连续步骤：（a）用氢终止存在于硅晶片的有源表面上的硅原子，其中所述活性表面被镜面抛光，并且半导体器件将形成在所述有源表面上; （b）用氟终止在硅晶片的活性表面上存在的硅原子; （c）在惰性气体气氛或还原气体气氛下将硅晶片快速加热到第一温度，其中第一温度在1300℃至1400℃的范围内; （d）将硅晶片在第一温度下保持一定时间; 和（e）快速冷却硅晶片。

公开(公告)号：US20120139088A1

公开(公告)日：2012-06-07

申请号：US13322080

申请日：2010-05-28

申请人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Hiroyuki Saito

发明人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Hiroyuki Saito

IPC分类号： H01L29/02 ,  H01L21/26

CPC分类号： H01L21/3225 ,  Y10S438/928

摘要： A silicon wafer for preventing a void defect in a bulk region from becoming source of contamination and slip generation in a device process is provided. And a heat-treating method thereof for reducing crystal defects such as COP in a region near the wafer surface to be a device active region is provided. The silicon wafer has a surface region 1 which is a defect-free region and a bulk region 2 including void defect of a polyhedron whose basic shape is an octahedron in which a corner portion of the polyhedron is in the curved shape and an inner-wall oxide film the void defect is removed. The silicon wafer is provided by performing a heat-treating method in which gas to be supplied, inner pressure of spaces and a maximum achievable temperature are set to a predetermined value when subjecting the silicon wafer produced by a CZ method to RTP.

摘要翻译： 提供了一种用于防止大块区域中的空隙缺陷成为装置处理中的污染源和滑移产生的硅晶片。 并且提供了一种用于在晶片表面附近的区域中减少诸如COP之类的晶体缺陷的热处理方法作为器件有源区。 硅晶片具有作为无缺陷区域的表面区域1和包括多面体的空隙的主体区域2，其基本形状为八面体，多面体的角部为弯曲形状，内壁 氧化膜去除空隙缺陷。 通过进行热处理方法来提供硅晶片，当将通过CZ方法制造的硅晶片经受RTP时，将待供给的气体，空间的内部压力和最大可实现温度设定为预定值。

公开(公告)号：US07679730B2

公开(公告)日：2010-03-16

申请号：US11908554

申请日：2007-09-13

申请人： Hideaki Takano ,  Miyuki Shimizu ,  Takeshi Senda ,  Koji Izunome ,  Yoshinori Hayashi ,  Kazuhiko Hamatani

发明人： Hideaki Takano ,  Miyuki Shimizu ,  Takeshi Senda ,  Koji Izunome ,  Yoshinori Hayashi ,  Kazuhiko Hamatani

IPC分类号： G01B11/16

CPC分类号： H01L22/12 ,  G01N21/8806 ,  G01N21/8851 ,  G01N21/9501 ,  G01N2021/8822 ,  H01L21/67288 ,  H01L2924/0002 ,  H01L2924/00

摘要： An image pickup device disposed in a predetermined position relative to a surface of a strained silicon wafer photographs the surface of the strained silicon wafer in a plurality of rotation angle positions on photographing conditions under which bright lines appearing on the surface of the strained silicon wafer can be photographed, in an environment where a light source device illuminates the surface of the strained silicon wafer which is rotating. A composite image in a predetermined angle position is generated from surface images of the strained silicon wafer in a plurality of rotation angle positions obtained by the image pickup device.

摘要翻译： 设置在相对于应变硅晶片的表面的预定位置的图像拾取装置在拍摄条件下以多个旋转角度位置拍摄应变硅晶片的表面，在该条件下，出现在应变硅晶片的表面上的亮线可以 在光源装置照射正在旋转的应变硅晶片的表面的环境中进行照相。 在由图像拾取装置获得的多个旋转角位置中，从应变硅晶片的表面图像生成预定角度位置的合成图像。

公开(公告)号：US08476149B2

公开(公告)日：2013-07-02

申请号：US12512492

申请日：2009-07-30

申请人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Yoichiro Mochizuki ,  Akihiko Kobayashi ,  Senlin Fu

发明人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Yoichiro Mochizuki ,  Akihiko Kobayashi ,  Senlin Fu

IPC分类号： H01L29/36

CPC分类号： H01L21/324 ,  C30B29/06 ,  C30B33/02 ,  H01L21/3225

摘要： A silicon wafer produced from a silicon single crystal ingot grown by Czochralski process is subjected to rapid heating/cooling thermal process at a maximum temperature (T1) of 1300° C. or more, but less than 1380° C. in an oxidizing gas atmosphere having an oxygen partial pressure of 20% or more, but less than 100%. The silicon wafer according to the invention has, in a defect-free region (DZ layer) including at least a device active region of the silicon wafer, a high oxygen concentration region having a concentration of oxygen solid solution of 0.7×1018 atoms/cm3 or more and at the same time, the defect-free region contains interstitial silicon in supersaturated state.

摘要翻译： 将通过切克劳斯基法生长的硅单晶锭制成的硅晶片在氧化气体气氛中在1300℃以上但小于1380℃的最高温度（T1）下进行快速加热/冷却热处理 氧分压为20％以上但小于100％。 根据本发明的硅晶片在至少包括硅晶片的器件有源区的无缺陷区（DZ层）中具有0.7×10 18原子/ cm 3的氧固溶体浓度的高氧浓度区域 以上，同时无缺陷区域含有过饱和状态的间隙硅。