发明申请
- 专利标题: RESISTANCE-CHANGE MEMORY
- 专利标题(中): 电阻变化记忆
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申请号: US13358677申请日: 2012-01-26
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公开(公告)号: US20120243294A1公开(公告)日: 2012-09-27
- 发明人: Mizuki Kaneko , Tomoki Higashi , Tomonori Kurosawa
- 申请人: Mizuki Kaneko , Tomoki Higashi , Tomonori Kurosawa
- 优先权: JP2011-066183 20110324
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
According to one embodiment, a resistance-change memory includes bit lines, word lines, a memory cell array including memory cells arranged at intersections between the bit lines and the word lines, each of the memory cells including a variable-resistance element and a diode, a control circuit configured to apply a reverse bias to the diode, and to write data to a selected memory cell, and a current limiting circuit configured to limit a current flowing to the selected memory cell in a write. The current limiting circuit controls the current flowing to the selected memory cell not to exceed a second compliance current obtained by adding a leakage current from an unselected memory cell to a predetermined first compliance current.
公开/授权文献
- US08750017B2 Resistance-change memory 公开/授权日:2014-06-10
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