发明申请
- 专利标题： METHOD FOR FORMING OXIDE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）： 形成氧化物半导体膜的方法和制造半导体器件的方法
-
申请号： US13422241申请日： 2012-03-16
-
公开(公告)号： US20120244659A1公开(公告)日： 2012-09-27
- 发明人: Yuki IMOTO , Tetsunori MARUYAMA , Toru TAKAYAMA
- 申请人： Yuki IMOTO , Tetsunori MARUYAMA , Toru TAKAYAMA
- 申请人地址： JP Atsugi-shi
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2011-067693 20110325
- 主分类号： H01L21/42
- IPC分类号： H01L21/42
摘要：
A method for forming an oxide semiconductor film having favorable semiconductor characteristics is provided. In addition, a method for manufacturing a semiconductor device having favorable electric characteristics, with use of the oxide semiconductor film is provided. A method for forming an oxide semiconductor film including the steps of forming an oxide semiconductor film, forming a hydrogen permeable film over and in contact with the oxide semiconductor film, forming a hydrogen capture film over and in contact with the hydrogen permeable film, and releasing hydrogen from the oxide semiconductor film by performing heat treatment. Further, in a method for manufacturing a semiconductor device, the method for forming an oxide semiconductor film is used.
公开/授权文献
信息查询
IPC分类:
