发明申请
- 专利标题： REPLACEMENT-GATE-COMPATIBLE PROGRAMMABLE ELECTRICAL ANTIFUSE
- 专利标题（中）： 替代可控可编程电抗器
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申请号： US13523120申请日： 2012-06-14
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公开(公告)号： US20120249160A1公开(公告)日： 2012-10-04
- 发明人: Satya N. Chakravarti , Dechao Guo , Chuck T. Le , Byoung W. Min , Rajeevakumar V. Thekkemadathil , Keith Kwong Hon Wong
- 申请人： Satya N. Chakravarti , Dechao Guo , Chuck T. Le , Byoung W. Min , Rajeevakumar V. Thekkemadathil , Keith Kwong Hon Wong
- 申请人地址： US TX Austin US NY Armonk
- 专利权人： FREESCALE SEMICONDUCTOR, INC.,INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： FREESCALE SEMICONDUCTOR, INC.,INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US TX Austin US NY Armonk
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; G01R31/02 ; H01H37/76 ; H01L21/8232 ; G01R27/08
摘要：
After planarization of a gate level dielectric layer, a dummy structure is removed to form a recess. A first conductive material layer and an amorphous metal oxide are deposited into the recess area. A second conduct material layer fills the recess. After planarization, an electrical antifuse is formed within the filled recess area, which includes a first conductive material portion, an amorphous metal oxide portion, and a second conductive material portion. To program the electrical antifuse, current is passed between the two terminals in the pair of the conductive contacts to transform the amorphous metal oxide portion into a crystallized metal oxide portion, which has a lower resistance. A sensing circuit determines whether the metal oxide portion is in an amorphous state (high resistance state) or in a crystalline state (low resistance state).