Invention Application
- Patent Title: MAGNETIC FIELD ASSISTED DEPOSITION
- Patent Title (中): 磁场辅助沉积
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Application No.: US13410545Application Date: 2012-03-02
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Publication No.: US20120251738A1Publication Date: 2012-10-04
- Inventor: Sang In LEE
- Applicant: Sang In LEE
- Applicant Address: US CA Sunnyvale
- Assignee: SYNOS TECHNOLOGY, INC.
- Current Assignee: SYNOS TECHNOLOGY, INC.
- Current Assignee Address: US CA Sunnyvale
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/50

Abstract:
Embodiments relate to applying a magnetic field across the paths of injected polar precursor molecules to cause spiral movement of the precursor molecules relative to the surface of a substrate. When the polar precursor molecules arrive at the surface of the substrate, the polar precursor molecules make lateral movements on the surface due to their inertia. Such lateral movements of the polar precursor molecules increase the chance that the molecules would find and settle at sites (e.g., nucleation sites, broken bonds and stepped surface locations) or react on the surface of the substrate. Due to the increased chance of absorption or reaction of the polar precursor molecules, the injection time or injection iterations may be reduced.
Public/Granted literature
- US08697198B2 Magnetic field assisted deposition Public/Granted day:2014-04-15
Information query
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