公开(公告)号：US20120098146A1

公开(公告)日：2012-04-26

申请号：US13276221

申请日：2011-10-18

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: H01L29/02 ,  C23C16/04 ,  H01L21/56

CPC classification number: H01L23/3192 ,  C23C16/042 ,  C23C16/45551 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The configuration of one or more barrier layers for encapsulating a device is controlled by setting parameters of atomic layer deposition (ALD). A substrate formed with the device is placed on a susceptor and exposed to multiple cycles of source precursor gas and reactant precursor gas injected by reactors of a deposition device. By adjusting one or more of (i) the relative speed between the susceptor and the reactors, (ii) configuration of the reactors, and (iii) flow rates of the gases injected by the reactors, the configuration of the layers deposited on the device can be controlled. By controlling the configuration of the deposited layers, defects in the deposited layers can be prevented or reduced.

Abstract translation: 通过设置原子层沉积（ALD）的参数来控制用于封装器件的一个或多个阻挡层的构造。 用该装置形成的衬底放置在基座上并暴露于通过沉积装置的反应器注入的源前体气体和反应物前体气体的多个循环。 通过调整（i）基座和反应器之间的相对速度，（ii）反应器的构造和（iii）由反应器注入的气体的流速，沉积在装置上的层的配置的一个或多个 可以控制。 通过控制沉积层的结构，可以防止或减少沉积层中的缺陷。

公开(公告)号：US20110262650A1

公开(公告)日：2011-10-27

申请号：US13094637

申请日：2011-04-26

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/44 ,  B05C11/00 ,  H05B3/03 ,  B05D1/00 ,  B05D1/32 ,  B05C5/00 ,  B05B1/00

CPC classification number: C23C16/4486 ,  B05B5/001 ,  B05B5/043 ,  C23C16/45551

Abstract: A vaporizing apparatus includes a chamber, a nozzle for dispersing a liquid into droplets, an electrode electrically isolated from the nozzle, and a heater for generating a vapor by applying heat to the droplets. The voltage source applies charges to the droplets by applying a voltage between the nozzle and the electrode. The vaporizing apparatus may be used to devices that deposit organic or inorganic thin films by chemical vapor deposition and/or atomic layer deposition processes, devices for supplying precursor materials that are deposited to form a thin film in organic light emitting diodes, devices that supply organic or inorganic precursor materials for encapsulation, and devices for supplying organic or inorganic polymer.

Abstract translation: 蒸发装置包括室，用于将液体分散到液滴中的喷嘴，与喷嘴电隔离的电极，以及通过向液滴施加热而产生蒸气的加热器。 电压源通过在喷嘴和电极之间施加电压来向液滴施加电荷。 蒸发装置可用于通过化学气相沉积和/或原子层沉积工艺沉积有机或无机薄膜的装置，用于供应在有机发光二极管中沉积以形成薄膜的前体材料的装置，供应有机 或用于封装的无机前体材料，以及用于供应有机或无机聚合物的装置。

公开(公告)号：US20100181566A1

公开(公告)日：2010-07-22

申请号：US12689927

申请日：2010-01-19

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: H01L29/22 ,  H01L29/861 ,  H01L21/36 ,  H01L31/18 ,  H01L31/0296

CPC classification number: H01L21/02554 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/075 ,  H01L31/078 ,  H01L31/1884 ,  Y02E10/50

Abstract: An electrode structure comprises a semiconductor junction comprising an n-type semiconductor layer and a p-type semiconductor layer; a hole exnihilation layer on the p-type semiconductor layer; and a transparent electrode layer on the hole exnihilation layer. The electrode structure further comprises a conductive layer between the hole exnihilation layer and the transparent electrode layer. In the electrode structure, one or more of the hole exnihilation layer, the conductive layer and the transparent electrode layer may be formed by an atomic layer deposition. In the electrode structure, a transparent electrode formed of a degenerated n-type oxide semiconductor does not come in direct contact with a p-type semiconductor, and thus, annihilation or recombination of holes generated in the p-type semiconductor can be reduced, which increases the carrier generation efficiency. Further, the electric conductivity of the transparent electrode is increased by the conductive layer, which improves electrical characteristics of a device.

Abstract translation: 电极结构包括包含n型半导体层和p型半导体层的半导体结; p型半导体层上的空穴除外层; 以及在透孔层上的透明电极层。 所述电极结构还包括在所述孔除硅层和所述透明电极层之间的导电层。 在电极结构中，可以通过原子层沉积形成空穴除外层，导电层和透明电极层中的一个或多个。 在电极结构中，由退化的n型氧化物半导体形成的透明电极不与p型半导体直接接触，因此可以减少在p型半导体中产生的空穴的湮灭或复合，其中 提高载波生成效率。 此外，通过导电层增加透明电极的导电性，这改善了器件的电特性。

公开(公告)号：US20100064971A1

公开(公告)日：2010-03-18

申请号：US12560705

申请日：2009-09-16

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/54

CPC classification number: C23C16/45578 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32541

Abstract: A plasma generator may include a first electrode extending in one direction, and a second electrode spaced apart from the first electrode. Facing surfaces of the first electrode and the second electrode may have spiral shapes along the one direction. A cross-section of the first electrode and a cross-section of the second electrode, which are perpendicular to the one direction, may have at least partially concentric shapes. An electrode for generating plasma may include a platform extending in one direction, and at least one protruding thread spirally formed on a surface of the platform along the one direction.

Abstract translation: 等离子体发生器可以包括沿一个方向延伸的第一电极和与第一电极间隔开的第二电极。 第一电极和第二电极的面对表面可沿着该一个方向具有螺旋形状。 第一电极的横截面和垂直于一个方向的第二电极的横截面可以具有至少部分同心的形状。 用于产生等离子体的电极可以包括沿着一个方向延伸的平台，以及至少一个突出的螺纹螺旋地沿着该一个方向形成在平台的表面上。

公开(公告)号：US20100037820A1

公开(公告)日：2010-02-18

申请号：US12539490

申请日：2009-08-11

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/455

CPC classification number: C23C16/45551

Abstract: A vapor deposition reactor includes a reaction module includes a first injection unit for injecting a first material onto a substrate. At least one second injection unit is placed within the first injection unit for injecting a second material onto the substrate. The substrate passes the reaction module through a relative motion between the substrate and the reaction module. The vapor deposition reactor advantageously injects a plurality of materials onto the substrate while the substrate passes the reaction module without exposing the substrate to the atmosphere in a chamber.

Abstract translation: 气相沉积反应器包括反应模块，其包括用于将第一材料注入到基底上的第一注射单元。 至少一个第二注射单元被放置在第一注射单元内，用于将第二材料注射到基底上。 基板通过反应模块通过基板和反应模块之间的相对运动。 气相沉积反应器有利地将多种材料注入到衬底上，同时衬底通过反应模块而不将衬底暴露在腔室中的大气中。

公开(公告)号：US20140027777A1

公开(公告)日：2014-01-30

申请号：US13560881

申请日：2012-07-27

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: H01L29/20 ,  C30B25/18 ,  C30B25/02

CPC classification number: C30B25/183 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/02491 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/267

Abstract: Embodiments relate to growing an epitaxy gallium-nitride (GaN) layer on a porous silicon (Si) substrate. The porous Si substrate has a larger surface area compared to non-porous Si substrate to distribute and accommodate stress caused by materials deposited on the substrate. An interface adjustment layer (e.g., transition metal silicide layer) is formed on the porous silicon substrate to promote growth of a buffer layer. A buffer layer formed for GaN layer may then be formed on the silicon substrate. A seed-layer for epitaxial growth of GaN layer is then formed on the buffer layer.

Abstract translation: 实施例涉及在多孔硅（Si）衬底上生长外延氮化镓（GaN）层。 与非多孔Si衬底相比，多孔Si衬底具有更大的表面积，以分配和适应由沉积在衬底上的材料引起的应力。 在多孔硅衬底上形成界面调整层（例如，过渡金属硅化物层），以促进缓冲层的生长。 然后可以在硅衬底上形成用于GaN层的缓冲层。 然后在缓冲层上形成用于GaN层外延生长的晶种层。

公开(公告)号：US20130023172A1

公开(公告)日：2013-01-24

申请号：US13536646

申请日：2012-06-28

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: B32B5/02 ,  C23C16/56 ,  C23C16/50 ,  C23C16/44

CPC classification number: D06M11/77 ,  A01N59/16 ,  C23C16/045 ,  C23C16/45544 ,  C23C16/45555 ,  D06M11/45 ,  D06M11/83 ,  Y10T442/20 ,  Y10T442/2098 ,  Y10T442/2984 ,  A01N25/08 ,  A01N2300/00

Abstract: Embodiments relate to depositing on one or more layers of materials on a fiber or fiber containing material using atomic layer deposition (ALD) to provide or enhance functionalities of the fibers or fiber containing material. Such functionalities include, for example, higher rigidity, higher strength, addition of resistance to bending, addition of resistance to impact or addition of resistance to tensile force of a fiber or fiber containing material. A layer of material is deposited coated on the fibers or the fiber containing material and then the surface of the material is oxidized, nitrified or carbonized to increase the volume of the material. By increasing the volume of the material, the material is subject to compressive stress. The compressive stress renders the fibers or the fiber containing material more rigid, stronger and more resistant against bending force, impact or tensile force.

Abstract translation: 实施例涉及使用原子层沉积（ALD）在含纤维或含纤维材料的一层或多层材料上沉积以提供或增强纤维或含纤维材料的功能性。 这样的功能包括例如较高的刚性，较高的强度，耐弯曲性，增加抗冲击性或增加抗纤维或含纤维材料的张力。 将一层材料沉积在纤维或含纤维材料上，然后材料的表面被氧化，硝化或碳化以增加材料的体积。 通过增加材料的体积，材料承受压应力。 压缩应力使纤维或含纤维材料更加坚固，更坚固，更抗弯曲力，冲击力或拉力。

公开(公告)号：US20130022658A1

公开(公告)日：2013-01-24

申请号：US13535155

申请日：2012-06-27

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/50 ,  C23C16/02 ,  A01P1/00 ,  A01N25/08 ,  A01N59/16

CPC classification number: D06M11/77 ,  A01N59/16 ,  C23C16/045 ,  C23C16/45544 ,  C23C16/45555 ,  D06M11/45 ,  D06M11/83 ,  Y10T442/20 ,  Y10T442/2098 ,  Y10T442/2984 ,  A01N25/08 ,  A01N2300/00

Abstract: Embodiments relate to depositing a layer of antimicrobial material such as silver on a permeable substrate using atomic layer deposition (ALD). A deposition device includes two injectors that inject source precursor, reactant precursor, purge gas or a combination thereof onto the permeable substrate that passes between the injectors. Part of the gas injected by an injector penetrates the permeable substrate and is discharged by the other injector. The remaining gas injected by the injector moves in parallel to the surface of the permeable substrate and is discharged via an exhaust portion formed on the same injector. While penetrating the substrate or moving in parallel to the surface, the source precursor or the reactant precursor becomes absorbed on the substrate or react with precursor already present on the substrate to deposit the antimicrobial material on the substrate.

Abstract translation: 实施例涉及使用原子层沉积（ALD）在可渗透基底上沉积诸如银的抗微生物材料层。 沉积装置包括将源前体，反应物前体，吹扫气体或其组合注入到在喷射器之间通过的可渗透基底上的两个喷射器。 由喷射器喷射的气体的一部分穿透可渗透基底并被另一个喷射器排出。 由喷射器喷射的剩余气体平行于可渗透基板的表面移动，并经由形成在同一喷射器上的排气部排出。 当穿透基底或平行于表面移动时，源前体或反应物前体被吸收到基底上或与已经存在于基底上的前体反应以将抗微生物材料沉积在基底上。

公开(公告)号：US20120207926A1

公开(公告)日：2012-08-16

申请号：US13368265

申请日：2012-02-07

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/455 ,  C23C16/40

CPC classification number: C23C16/45548 ,  C23C16/403 ,  C23C16/4412

Abstract: Performing atomic layer deposition using a combined injector that sequentially injects source precursor and reactant precursor onto a substrate. The source precursor is injected into the injector via a first channel, injected onto the substrate and then discharged through a first exhaust portion. The reactant precursor is then injected into the injector via a second channel separate from the first channel, injected onto the substrate and then discharged through a second exhaust portion separate from the first exhaust portion. After injecting the source precursor or the reactant precursor, a purge gas may be injected into the injector and discharged to remove any source precursor or reactant precursor remaining in paths from the first or second channel to the first or second exhaust portion.

Abstract translation: 使用将源前体和反应物前体依次注入到基底上的组合注射器进行原子层沉积。 源前体经由第一通道注入注射器，注射到基底上，然后通过第一排气部分排出。 然后将反应物前体经由与第一通道分开的第二通道注入到注射器中，注入到基底上，然后通过与第一排气部分分开的第二排气部分排出。 在注入源前体或反应物前体之后，可将吹扫气体注入到喷射器中并排出以除去保留在从第一或第二通道到第一或第二排气部分的路径中的任何源前体或反应物前体。

公开(公告)号：US20100310771A1

公开(公告)日：2010-12-09

申请号：US12794209

申请日：2010-06-04

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/44 ,  C23C16/00

CPC classification number: C23C16/45551 ,  C01B21/076 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40

Abstract: A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes at least one first injection portion for injecting a reacting material to a recess in a first portion of the vapor deposition reactor. A second portion is connected to the first space and has a recess connected to the recess of the first portion. The recess of the second portion is maintained to have pressure lower than the pressure in the first space. A third portion is connected to the second space, and an exhaust portion is connected to the third space.

Abstract translation: 蒸镀反应器及薄膜形成方法。 气相沉积反应器包括至少一个用于将反应材料注入到蒸镀反应器的第一部分中的凹部的第一注射部分。 第二部分连接到第一空间并且具有连接到第一部分的凹部的凹部。 第二部分的凹部被保持为具有低于第一空间中的压力的​​压力。 第三部分连接到第二空间，并且排气部分连接到第三空间。