公开(公告)号：US20140027777A1

公开(公告)日：2014-01-30

申请号：US13560881

申请日：2012-07-27

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: H01L29/20 ,  C30B25/18 ,  C30B25/02

CPC classification number: C30B25/183 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/02491 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/267

Abstract: Embodiments relate to growing an epitaxy gallium-nitride (GaN) layer on a porous silicon (Si) substrate. The porous Si substrate has a larger surface area compared to non-porous Si substrate to distribute and accommodate stress caused by materials deposited on the substrate. An interface adjustment layer (e.g., transition metal silicide layer) is formed on the porous silicon substrate to promote growth of a buffer layer. A buffer layer formed for GaN layer may then be formed on the silicon substrate. A seed-layer for epitaxial growth of GaN layer is then formed on the buffer layer.

Abstract translation: 实施例涉及在多孔硅（Si）衬底上生长外延氮化镓（GaN）层。 与非多孔Si衬底相比，多孔Si衬底具有更大的表面积，以分配和适应由沉积在衬底上的材料引起的应力。 在多孔硅衬底上形成界面调整层（例如，过渡金属硅化物层），以促进缓冲层的生长。 然后可以在硅衬底上形成用于GaN层的缓冲层。 然后在缓冲层上形成用于GaN层外延生长的晶种层。

公开(公告)号：US20130023172A1

公开(公告)日：2013-01-24

申请号：US13536646

申请日：2012-06-28

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: B32B5/02 ,  C23C16/56 ,  C23C16/50 ,  C23C16/44

CPC classification number: D06M11/77 ,  A01N59/16 ,  C23C16/045 ,  C23C16/45544 ,  C23C16/45555 ,  D06M11/45 ,  D06M11/83 ,  Y10T442/20 ,  Y10T442/2098 ,  Y10T442/2984 ,  A01N25/08 ,  A01N2300/00

Abstract: Embodiments relate to depositing on one or more layers of materials on a fiber or fiber containing material using atomic layer deposition (ALD) to provide or enhance functionalities of the fibers or fiber containing material. Such functionalities include, for example, higher rigidity, higher strength, addition of resistance to bending, addition of resistance to impact or addition of resistance to tensile force of a fiber or fiber containing material. A layer of material is deposited coated on the fibers or the fiber containing material and then the surface of the material is oxidized, nitrified or carbonized to increase the volume of the material. By increasing the volume of the material, the material is subject to compressive stress. The compressive stress renders the fibers or the fiber containing material more rigid, stronger and more resistant against bending force, impact or tensile force.

Abstract translation: 实施例涉及使用原子层沉积（ALD）在含纤维或含纤维材料的一层或多层材料上沉积以提供或增强纤维或含纤维材料的功能性。 这样的功能包括例如较高的刚性，较高的强度，耐弯曲性，增加抗冲击性或增加抗纤维或含纤维材料的张力。 将一层材料沉积在纤维或含纤维材料上，然后材料的表面被氧化，硝化或碳化以增加材料的体积。 通过增加材料的体积，材料承受压应力。 压缩应力使纤维或含纤维材料更加坚固，更坚固，更抗弯曲力，冲击力或拉力。

公开(公告)号：US20130022658A1

公开(公告)日：2013-01-24

申请号：US13535155

申请日：2012-06-27

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/50 ,  C23C16/02 ,  A01P1/00 ,  A01N25/08 ,  A01N59/16

CPC classification number: D06M11/77 ,  A01N59/16 ,  C23C16/045 ,  C23C16/45544 ,  C23C16/45555 ,  D06M11/45 ,  D06M11/83 ,  Y10T442/20 ,  Y10T442/2098 ,  Y10T442/2984 ,  A01N25/08 ,  A01N2300/00

Abstract: Embodiments relate to depositing a layer of antimicrobial material such as silver on a permeable substrate using atomic layer deposition (ALD). A deposition device includes two injectors that inject source precursor, reactant precursor, purge gas or a combination thereof onto the permeable substrate that passes between the injectors. Part of the gas injected by an injector penetrates the permeable substrate and is discharged by the other injector. The remaining gas injected by the injector moves in parallel to the surface of the permeable substrate and is discharged via an exhaust portion formed on the same injector. While penetrating the substrate or moving in parallel to the surface, the source precursor or the reactant precursor becomes absorbed on the substrate or react with precursor already present on the substrate to deposit the antimicrobial material on the substrate.

Abstract translation: 实施例涉及使用原子层沉积（ALD）在可渗透基底上沉积诸如银的抗微生物材料层。 沉积装置包括将源前体，反应物前体，吹扫气体或其组合注入到在喷射器之间通过的可渗透基底上的两个喷射器。 由喷射器喷射的气体的一部分穿透可渗透基底并被另一个喷射器排出。 由喷射器喷射的剩余气体平行于可渗透基板的表面移动，并经由形成在同一喷射器上的排气部排出。 当穿透基底或平行于表面移动时，源前体或反应物前体被吸收到基底上或与已经存在于基底上的前体反应以将抗微生物材料沉积在基底上。

公开(公告)号：US20120207926A1

公开(公告)日：2012-08-16

申请号：US13368265

申请日：2012-02-07

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/455 ,  C23C16/40

CPC classification number: C23C16/45548 ,  C23C16/403 ,  C23C16/4412

Abstract: Performing atomic layer deposition using a combined injector that sequentially injects source precursor and reactant precursor onto a substrate. The source precursor is injected into the injector via a first channel, injected onto the substrate and then discharged through a first exhaust portion. The reactant precursor is then injected into the injector via a second channel separate from the first channel, injected onto the substrate and then discharged through a second exhaust portion separate from the first exhaust portion. After injecting the source precursor or the reactant precursor, a purge gas may be injected into the injector and discharged to remove any source precursor or reactant precursor remaining in paths from the first or second channel to the first or second exhaust portion.

Abstract translation: 使用将源前体和反应物前体依次注入到基底上的组合注射器进行原子层沉积。 源前体经由第一通道注入注射器，注射到基底上，然后通过第一排气部分排出。 然后将反应物前体经由与第一通道分开的第二通道注入到注射器中，注入到基底上，然后通过与第一排气部分分开的第二排气部分排出。 在注入源前体或反应物前体之后，可将吹扫气体注入到喷射器中并排出以除去保留在从第一或第二通道到第一或第二排气部分的路径中的任何源前体或反应物前体。

公开(公告)号：US20100310771A1

公开(公告)日：2010-12-09

申请号：US12794209

申请日：2010-06-04

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/44 ,  C23C16/00

CPC classification number: C23C16/45551 ,  C01B21/076 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40

Abstract: A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes at least one first injection portion for injecting a reacting material to a recess in a first portion of the vapor deposition reactor. A second portion is connected to the first space and has a recess connected to the recess of the first portion. The recess of the second portion is maintained to have pressure lower than the pressure in the first space. A third portion is connected to the second space, and an exhaust portion is connected to the third space.

Abstract translation: 蒸镀反应器及薄膜形成方法。 气相沉积反应器包括至少一个用于将反应材料注入到蒸镀反应器的第一部分中的凹部的第一注射部分。 第二部分连接到第一空间并且具有连接到第一部分的凹部的凹部。 第二部分的凹部被保持为具有低于第一空间中的压力的​​压力。 第三部分连接到第二空间，并且排气部分连接到第三空间。

公开(公告)号：US08501633B2

公开(公告)日：2013-08-06

申请号：US13572555

申请日：2012-08-10

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: H01L21/31

CPC classification number: H01L21/76224 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/0262 ,  H01L21/3141 ,  H01L21/31604

Abstract: A substrate structure is produced by forming a first material layer on a substrate having a recess, removing the first material layer from the portion of the substrate except for the recess using a second material that reacts with the first material, and forming a deposition film from the first material layer using a third material that reacts with the first material. A method of manufacturing a device may include the method of forming a substrate structure.

Abstract translation: 通过在具有凹部的基板上形成第一材料层来制造基板结构，使用与第一材料反应的第二材料从基板的除了凹部的部分除去第一材料层，并从 所述第一材料层使用与所述第一材料反应的第三材料。 制造器件的方法可以包括形成衬底结构的方法。

公开(公告)号：US20130122197A1

公开(公告)日：2013-05-16

申请号：US13666840

申请日：2012-11-01

Applicant: SYNOS TECHNOLOGY, INC.

Inventor： Sang In LEE

IPC: C23C16/04

CPC classification number: C23C16/042 ,  G03F7/12 ,  H01L51/0011

Abstract: Embodiments relate to a structure for securing a shadow mask and a susceptor where the top surface of the shadow mask mounted with the susceptor is flush with the top surface of the susceptor. When the susceptor is mounted with the shadow mask, the entire top surface of the susceptor and the shadow mask is substantially coplanar. A substrate onto which material is deposited is placed below the shadow mask. The susceptor moves below reactors for injecting materials or radicals. Since the entire top surface of the susceptor is substantially flat, the vertical distance between the reactors and the susceptor can be reduced, contributing to the overall quality of the layer formed on the substrate and reducing the materials wasted by leaking outside the gap between the susceptor and the reactors.

Abstract translation: 实施例涉及用于固定荫罩和基座的结构，其中安装有基座的荫罩的顶表面与基座的顶表面齐平。 当基座安装有荫罩时，基座的整个顶表面和荫罩基本上共面。 将沉积有材料的基板放置在荫罩下方。 感受器在反应器下方移动，用于注入材料或自由基。 由于基座的整个顶表面基本上是平坦的，因此能够减小反应器和基座之间的垂直距离，从而有助于在基板上形成的层的整体质量，并且减少由于基座之间的间隙泄漏而浪费的材料 和反应堆。

公开(公告)号：US20120114877A1

公开(公告)日：2012-05-10

申请号：US13285417

申请日：2011-10-31

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/452 ,  H05H1/24

CPC classification number: H01J37/32899 ,  C23C16/45538 ,  C23C16/45551

Abstract: Two or more plasma chambers are provided in a radical reactor to generate radicals of gases under different conditions for use in atomic layer deposition (ALD) process. The radical reactor has a body with multiple channels and corresponding process chambers. Each plasma chamber is surrounded by an outer electrode and has an inner electrode extending through the chamber. When voltage is applied across the outer electrode and the inner electrode with gas present in the plasma chamber, radicals of the gas is generated in the plasma chamber. The radicals generated in the plasma chamber are then injected into a mixing chamber for mixing with radicals of another gas from another plasma chamber, and injected onto the substrate. By providing two or more plasma chambers, different radicals of gases can be generated within the same radical reactor, which obviates the need for separate radical generators.

Abstract translation: 在自由基反应器中提供两个或更多个等离子体室，以在用于原子层沉积（ALD）工艺的不同条件下产生气体自由基。 自由基反应器具有多个通道的主体和相应的处理室。 每个等离子体室被外部电极包围，并且具有延伸穿过该室的内部电极。 当通过存在于等离子体室中的气体在外电极和内电极上施加电压时，在等离子体室中产生气体的自由基。 然后将等离子体室中产生的自由基注入到混合室中，以与来自另一等离子体室的另一种气体的自由基混合，并注入到基板上。 通过提供两个或更多个等离子体室，可以在相同的自由基反应器内产生不同的气体基团，这消除了对单独的自由基发生器的需要。

公开(公告)号：US20110290551A1

公开(公告)日：2011-12-01

申请号：US13107750

申请日：2011-05-13

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: H05K5/00 ,  H05H1/24 ,  C23C16/40

CPC classification number: H01L51/5253 ,  H01L51/0096 ,  H01L2251/5338 ,  H01L2251/5369 ,  Y02E10/549

Abstract: A structure for protecting a device includes a first layer, one or more first microstructures on the first layer, and a second layer disposed on the first layer. The second layer is disposed on a surface of the first layer on which one or more microstructures are provided. The microstructure may have a hemispheric shape or other random shapes having a curved surface. Since the area of the interface surface between layers is increased due to the at least one microstructure, the stress per unit area of the interface surface is reduced. Further, the microstructure increases the length of the path that ambient species need to travel in order to reach a device or other active components, thereby reducing the amount of infiltrating ambient species.

Abstract translation: 用于保护装置的结构包括第一层，第一层上的一个或多个第一微结构和设置在第一层上的第二层。 第二层设置在其上设置有一个或多个微结构的第一层的表面上。 微结构可以具有半球形状或具有弯曲表面的其它随机形状。 由于至少一个微结构，由于层间界面的面积增加，因此界面表面的每单位面积的应力减小。 此外，微结构增加环境物质需要行进的路径的长度以便到达装置或其它活性组分，从而减少渗透环境物质的量。

公开(公告)号：US20110076421A1

公开(公告)日：2011-03-31

申请号：US12890504

申请日：2010-09-24

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/50 ,  C23C16/458 ,  C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC classification number: C23C16/045 ,  C23C16/00 ,  C23C16/40 ,  C23C16/403 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/545

Abstract: A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes first to third portions arranged along an arc of a circle. The first portion includes at least one first injection portion for injecting a material to a recess in the first portion. The second portion is adjacent to the first portion and has a recess communicatively connected to the recess of the first portion. The third portion is adjacent to the second portion and has a recess communicatively connected to the recess of the second portion and an exhaust portion for discharging the material from the vapor deposition reactor.

Abstract translation: 蒸镀反应器及薄膜形成方法。 气相沉积反应器包括沿圆弧排列的第一至第三部分。 第一部分包括用于将材料注射到第一部分中的凹部中的至少一个第一注射部分。 第二部分与第一部分相邻，并具有与第一部分的凹部通信连接的凹部。 第三部分与第二部分相邻并且具有与第二部分的凹部连通的凹部和用于从气相沉积反应器排出材料的排气部分。