发明申请
US20120258261A1 INCREASING ETCH SELECTIVITY OF CARBON FILMS WITH LOWER ABSORPTION CO-EFFICIENT AND STRESS
审中-公开
提高碳吸收能力的选择性较低吸收效率和应力
- 专利标题： INCREASING ETCH SELECTIVITY OF CARBON FILMS WITH LOWER ABSORPTION CO-EFFICIENT AND STRESS
- 专利标题（中）： 提高碳吸收能力的选择性较低吸收效率和应力
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申请号： US13443668申请日： 2012-04-10
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公开(公告)号： US20120258261A1公开(公告)日： 2012-10-11
- 发明人: Sirish Reddy , Alice Hollister , Pramod Subramonium , Jon Henri , Chunhai Ji , Zhi Yuan Fang
- 申请人： Sirish Reddy , Alice Hollister , Pramod Subramonium , Jon Henri , Chunhai Ji , Zhi Yuan Fang
- 申请人地址： US CA San Jose
- 专利权人： Novellus Systems, Inc.
- 当前专利权人： Novellus Systems, Inc.
- 当前专利权人地址： US CA San Jose
- 主分类号： B29B13/08
- IPC分类号： B29B13/08
摘要：
A method for depositing a film includes arranging a substrate in a plasma enhanced chemical vapor deposition chamber. A first ashable hardmask (AHM) layer that is carbon-based is deposited on the substrate. During the depositing of the first AHM layer, doping is performed with at least one dopant selected from a group consisting of silicon, silane, boron, nitrogen, germanium, carbon, ammonia, and carbon dioxide. An atomic percentage of the at least one dopant is greater than or equal to 5% of the first AHM layer.
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