发明申请
US20120261637A1 OXIDE BASED MEMORY WITH A CONTROLLED OXYGEN VACANCY CONDUCTION PATH
有权
基于氧化物的记忆与控制的氧气输送路径
- 专利标题: OXIDE BASED MEMORY WITH A CONTROLLED OXYGEN VACANCY CONDUCTION PATH
- 专利标题(中): 基于氧化物的记忆与控制的氧气输送路径
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申请号: US13087050申请日: 2011-04-14
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公开(公告)号: US20120261637A1公开(公告)日: 2012-10-18
- 发明人: Jun Liu , Gurtej S. Sandhu
- 申请人: Jun Liu , Gurtej S. Sandhu
- 申请人地址: US ID Boise
- 专利权人: MICRON TECHNOLOGY, INC.
- 当前专利权人: MICRON TECHNOLOGY, INC.
- 当前专利权人地址: US ID Boise
- 主分类号: H01L45/00
- IPC分类号: H01L45/00
摘要:
Methods, devices, and systems associated with oxide based memory can include a method of forming an oxide based memory cell. Forming an oxide based memory cell can include forming a first conductive element, forming a substoichiometric oxide over the first conductive element, forming a second conductive element over the substoichiometric oxide, and oxidizing edges of the substoichiometric oxide by subjecting the substoichiometric oxide to an oxidizing environment to define a controlled oxygen vacancy conduction path near a center of the oxide.