发明申请
- 专利标题: MOSFET with Recessed channel FILM and Abrupt Junctions
- 专利标题(中): 具有嵌入式通道FILM和突发接合的MOSFET
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申请号: US13086459申请日: 2011-04-14
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公开(公告)号: US20120261754A1公开(公告)日: 2012-10-18
- 发明人: Kangguo Cheng , Bruce Doris , Ali Khakifirooz , Pranita Kulkarni
- 申请人: Kangguo Cheng , Bruce Doris , Ali Khakifirooz , Pranita Kulkarni
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/336
摘要:
MOSFETs and methods for making MOSFETs with a recessed channel and abrupt junctions are disclosed. The method includes creating source and drain extensions while a dummy gate is in place. The source/drain extensions create a diffuse junction with the silicon substrate. The method continues by removing the dummy gate and etching a recess in the silicon substrate. The recess intersects at least a portion of the source and drain junction. Then a channel is formed by growing a silicon film to at least partially fill the recess. The channel has sharp junctions with the source and drains, while the unetched silicon remaining below the channel has diffuse junctions with the source and drain. Thus, a MOSFET with two junction regions, sharp and diffuse, in the same transistor can be created.
公开/授权文献
- US08691650B2 MOSFET with recessed channel film and abrupt junctions 公开/授权日:2014-04-08