发明申请
- 专利标题: PLASMA PROCESSING APPARATUS
- 专利标题(中): 等离子体加工设备
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申请号: US13454513申请日: 2012-04-24
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公开(公告)号: US20120267048A1公开(公告)日: 2012-10-25
- 发明人: Kazuki Moyama , Kiyotaka Ishibashi , Osamu Morita , Takehiro Tanikawa , Naoki Matsumoto , Naoki Mihara , Wataru Yoshikawa
- 申请人: Kazuki Moyama , Kiyotaka Ishibashi , Osamu Morita , Takehiro Tanikawa , Naoki Matsumoto , Naoki Mihara , Wataru Yoshikawa
- 申请人地址: JP Tokyo
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo
- 优先权: JP2011-097336 20110425; JP2012-088583 20120409
- 主分类号: B05C5/00
- IPC分类号: B05C5/00
摘要:
A plasma processing apparatus includes a processing chamber, a stage, a dielectric member, a microwave introduction device, an injector, and an electric field shield. The processing chamber has a processing space therein. The stage is provided within the processing chamber. The dielectric member has a through hole and is provided to face the stage. The microwave introduction device is configured to introduce microwave into the processing space via the dielectric member. The injector has at least one through hole and is made of a dielectric material, e.g., a bulk dielectric material. The injector is provided within the dielectric member. The injector and the through hole of the dielectric member form a path for supplying a processing gas into the processing space. The electric field shield encloses the injector.
公开/授权文献
- US09111726B2 Plasma processing apparatus 公开/授权日:2015-08-18