公开(公告)号：US20110308733A1

公开(公告)日：2011-12-22

申请号：US13115289

申请日：2011-05-25

申请人： Naoki Mihara ,  Kenji Sudou ,  Kazuo Murakami ,  Satoshi Furukawa

发明人： Naoki Mihara ,  Kenji Sudou ,  Kazuo Murakami ,  Satoshi Furukawa

IPC分类号： C23F1/08 ,  H05H1/24

CPC分类号： H01J37/3244 ,  H01J37/32449 ,  H01J37/32807

摘要： There is provided a plasma processing apparatus capable of performing a plasma process while surely supplying a gas. The plasma processing apparatus includes an outer gas supply member having gas supply openings for supplying a plasma processing gas and a jacket configured to support the outer gas supply member within a processing chamber and serving as a gas supply member supporting device. The jacket includes three supporting members installed so as to connect the outer gas supply member and a sidewall and arranged at a certain distance in a direction in which the outer gas supply member extends and mounts fixed to the sidewall so as to mount the supporting members therein. The supporting members include a first supporting member fixed to a first mount and a second supporting member movably supported in a second mount.

摘要翻译： 提供了能够在确保供给气体的同时进行等离子体处理的等离子体处理装置。 等离子体处理装置包括外部气体供给构件，其具有用于供给等离子体处理气体的气体供给开口和构造成在处理室内支撑外部气体供给构件并用作气体供给构件支撑装置的护套。 夹套包括三个支撑构件，其安装成连接外部气体供给构件和侧壁，并且在外部气体供给构件延伸并安装固定到侧壁的方向上以一定距离布置，以便将支撑构件安装在其中 。 支撑构件包括固定到第一安装件的第一支撑构件和可移动地支撑在第二安装件中的第二支撑构件。

公开(公告)号：US20130302992A1

公开(公告)日：2013-11-14

申请号：US13885708

申请日：2011-11-16

申请人： Toshihisa Nozawa ,  Caizhong Tian ,  Masaru Sasaki ,  Naoki Mihara ,  Naoki Matsumoto ,  Kazuki Moyama ,  Jun Yoshikawa

发明人： Toshihisa Nozawa ,  Caizhong Tian ,  Masaru Sasaki ,  Naoki Mihara ,  Naoki Matsumoto ,  Kazuki Moyama ,  Jun Yoshikawa

IPC分类号： H05H1/46

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/3244

摘要： An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.

摘要翻译： 一种用于等离子体处理的装置，包括设置有用于安装基板的安装台的处理容器，构造成将第一气体供应到处理容器中的第一气体供给单元，第一等离子体产生单元，其被配置为将第一 第二气体供给单元，被配置为将第二气体供应到处理容器中;第二等离子体产生单元，被配置为将至少一部分第二气体转化为第二等离子体。 来自安装台的第二气体的入口的高度低于来自安装台的第一气体的入口的高度。

公开(公告)号：US20120267048A1

公开(公告)日：2012-10-25

申请号：US13454513

申请日：2012-04-24

申请人： Kazuki Moyama ,  Kiyotaka Ishibashi ,  Osamu Morita ,  Takehiro Tanikawa ,  Naoki Matsumoto ,  Naoki Mihara ,  Wataru Yoshikawa

发明人： Kazuki Moyama ,  Kiyotaka Ishibashi ,  Osamu Morita ,  Takehiro Tanikawa ,  Naoki Matsumoto ,  Naoki Mihara ,  Wataru Yoshikawa

IPC分类号： B05C5/00

CPC分类号： H01J37/32192 ,  H01J37/32229 ,  H01J37/3244

摘要： A plasma processing apparatus includes a processing chamber, a stage, a dielectric member, a microwave introduction device, an injector, and an electric field shield. The processing chamber has a processing space therein. The stage is provided within the processing chamber. The dielectric member has a through hole and is provided to face the stage. The microwave introduction device is configured to introduce microwave into the processing space via the dielectric member. The injector has at least one through hole and is made of a dielectric material, e.g., a bulk dielectric material. The injector is provided within the dielectric member. The injector and the through hole of the dielectric member form a path for supplying a processing gas into the processing space. The electric field shield encloses the injector.

摘要翻译： 等离子体处理装置包括处理室，载物台，电介质构件，微波引入装置，注射器和电场屏蔽。 处理室在其中具有处理空间。 工作台设置在处理室内。 电介质构件具有通孔并且设置成面向台。 微波引入装置经由电介质构件将微波引入处理空间。 喷射器具有至少一个通孔，并且由介电材料制成，例如大体电介质材料。 喷射器设置在电介质构件内。 介电构件的注射器和通孔形成用于将处理气体供应到处理空间的路径。 电场屏蔽封闭注射器。

公开(公告)号：US08920596B2

公开(公告)日：2014-12-30

申请号：US12862915

申请日：2010-08-25

申请人： Naoki Mihara ,  Naoki Matsumoto ,  Jun Yoshikawa ,  Kazuo Murakami

发明人： Naoki Mihara ,  Naoki Matsumoto ,  Jun Yoshikawa ,  Kazuo Murakami

IPC分类号： H01L21/3065 ,  H01J37/32

CPC分类号： H01J37/32192 ,  C23C16/513 ,  H01J37/3244 ,  H01J37/32449

摘要： In a plasma processing apparatus for processing a substrate by plasmatizing a process gas introduced into a processing container, an introducing unit which introduces the process gas is formed on a ceiling surface of the processing container; a gas retention portion which gathers the process gas supplied from the outside of the processing container through a supply passage, and a plurality of gas ejection holes which allow communication between the gas retention portion and the inside of the processing container are formed in the introducing unit; a gas ejection hole is not formed in a location of the gas retention portion that faces an opening of the supply passage; and a cross section of each of the gas ejection holes has a flat shape.

摘要翻译： 在通过对引入到处理容器中的处理气体进行等离子体处理衬底的等离子体处理装置中，在处理容器的顶表面上形成引入处理气体的引入单元; 气体保持部，其通过供给通路收集从处理容器的外部供给的处理气体，并且在导入单元中形成有能够使气体保持部与处理容器内部连通的多个气体喷出孔 ; 在气体保持部的与供给通道的开口相对的位置处不形成气体喷出孔; 并且每个气体喷射孔的横截面具有扁平形状。

公开(公告)号：US20110048642A1

公开(公告)日：2011-03-03

申请号：US12862915

申请日：2010-08-25

申请人： Naoki MIHARA ,  Naoki MATSUMOTO ,  Jun YOSHIKAWA ,  Kazuo MURAKAMI

发明人： Naoki MIHARA ,  Naoki MATSUMOTO ,  Jun YOSHIKAWA ,  Kazuo MURAKAMI

IPC分类号： H01L21/465

CPC分类号： H01J37/32192 ,  C23C16/513 ,  H01J37/3244 ,  H01J37/32449

摘要： In a plasma processing apparatus for processing a substrate by plasmatizing a process gas introduced into a processing container, an introducing unit which introduces the process gas is formed on a ceiling surface of the processing container; a gas retention portion which gathers the process gas supplied from the outside of the processing container through a supply passage, and a plurality of gas ejection holes which allow communication between the gas retention portion and the inside of the processing container are formed in the introducing unit; a gas ejection hole is not formed in a location of the gas retention portion that faces an opening of the supply passage; and a cross section of each of the gas ejection holes has a flat shape.

摘要翻译： 在通过对引入到处理容器中的处理气体进行等离子体处理衬底的等离子体处理装置中，在处理容器的顶表面上形成引入处理气体的引入单元; 气体保持部，其通过供给通路收集从处理容器的外部供给的处理气体，并且在导入单元中形成有能够使气体保持部与处理容器内部连通的多个气体喷出孔 ; 在气体保持部的与供给通道的开口相对的位置处不形成气体喷出孔; 并且每个气体喷射孔的横截面具有扁平形状。

公开(公告)号：US09277637B2

公开(公告)日：2016-03-01

申请号：US13885708

申请日：2011-11-16

申请人： Toshihisa Nozawa ,  Caizhong Tian ,  Masaru Sasaki ,  Naoki Mihara ,  Naoki Matsumoto ,  Kazuki Moyama ,  Jun Yoshikawa

发明人： Toshihisa Nozawa ,  Caizhong Tian ,  Masaru Sasaki ,  Naoki Mihara ,  Naoki Matsumoto ,  Kazuki Moyama ,  Jun Yoshikawa

IPC分类号： H01L21/306 ,  H05H1/46 ,  H01J37/32

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/3244

摘要： An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.

摘要翻译： 一种用于等离子体处理的装置，包括设置有用于安装基板的安装台的处理容器，构造成将第一气体供应到处理容器中的第一气体供给单元，第一等离子体产生单元，其被配置为将第一 第二气体供给单元，被配置为将第二气体供应到处理容器中;第二等离子体产生单元，被配置为将至少一部分第二气体转化为第二等离子体。 来自安装台的第二气体的入口的高度低于来自安装台的第一气体的入口的高度。

公开(公告)号：US09111726B2

公开(公告)日：2015-08-18

申请号：US13454513

申请日：2012-04-24

申请人： Kazuki Moyama ,  Kiyotaka Ishibashi ,  Osamu Morita ,  Takehiro Tanikawa ,  Naoki Matsumoto ,  Naoki Mihara ,  Wataru Yoshikawa

发明人： Kazuki Moyama ,  Kiyotaka Ishibashi ,  Osamu Morita ,  Takehiro Tanikawa ,  Naoki Matsumoto ,  Naoki Mihara ,  Wataru Yoshikawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32192 ,  H01J37/32229 ,  H01J37/3244

摘要： A plasma processing apparatus includes a processing chamber, a stage, a dielectric member, a microwave introduction device, an injector, and an electric field shield. The processing chamber has a processing space therein. The stage is provided within the processing chamber. The dielectric member has a through hole and is provided to face the stage. The microwave introduction device is configured to introduce microwave into the processing space via the dielectric member. The injector has at least one through hole and is made of a dielectric material, e.g., a bulk dielectric material. The injector is provided within the dielectric member. The injector and the through hole of the dielectric member form a path for supplying a processing gas into the processing space. The electric field shield encloses the injector.

摘要翻译： 等离子体处理装置包括处理室，载物台，电介质构件，微波引入装置，注射器和电场屏蔽。 处理室在其中具有处理空间。 工作台设置在处理室内。 电介质构件具有通孔并且设置成面向台。 微波引入装置经由电介质构件将微波引入处理空间。 喷射器具有至少一个通孔，并且由介电材料制成，例如大体电介质材料。 喷射器设置在电介质构件内。 介电构件的注射器和通孔形成用于将处理气体供应到处理空间的路径。 电场屏蔽封闭注射器。

公开(公告)号：US07374646B2

公开(公告)日：2008-05-20

申请号：US10767253

申请日：2004-01-30

申请人： Hidenao Suzuki ,  Kazufumi Nomura ,  Kunihito Ide ,  Hiroyuki Kanda ,  Koji Mishima ,  Naoki Mihara ,  Natsuki Makino ,  Seiji Katsuoka

发明人： Hidenao Suzuki ,  Kazufumi Nomura ,  Kunihito Ide ,  Hiroyuki Kanda ,  Koji Mishima ,  Naoki Mihara ,  Natsuki Makino ,  Seiji Katsuoka

IPC分类号： C25D17/00 ,  C25D17/02 ,  C25D17/06 ,  C25D7/12

CPC分类号： H01L21/2885 ,  C25D7/123 ,  C25D17/001 ,  H01L21/76877

摘要： The present invention provides an electrolytic processing apparatus which is capable of increasing an in-plane uniformity of a film thickness of a plated film by making more uniform an electric field distribution over an entire surface to be processed of a substrate even if the substrate has a large area, and controlling more uniformly a speed, over the entire surface to be processed of the substrate. The electrolytic processing apparatus of this invention includes: a substrate holder for holding a substrate, a first electrode for being brought into contact with the substrate to supply current to a surface, to be processed, of the substrate; a second electrode disposed substantially parallel to the surface, to be processed, of the substrate in a position facing the surface, to be processed, of the substrate held by the substrate holder; a high resistance structure disposed between the substrate held by the substrate holder and the second electrode; an electrolytic solution introducing portion for introducing an electrolytic solution into a region across which the substrate held by the substrate holder and the high resistance structure face each other, from laterally of the high resistance structure; and a power source for applying a voltage between the first electrode and the second electrode.

摘要翻译： 本发明提供一种电解处理装置，其能够通过使基板的整个表面上的电场分布更均匀，从而提高镀膜的膜厚的面内均匀性， 大面积，并且在基板的整个待处理表面上更均匀地控制速度。 本发明的电解处理装置包括：用于保持基板的基板保持器，用于与基板接触的第一电极，以将基板的待加工表面供给电流; 基板平行于被处理面的基板平面的第二电极，所述第一电极与所述基板保持器保持的所述基板面对所述要被处理的表面的位置; 设置在由衬底保持器保持的衬底和第二电极之间的高电阻结构; 电解液引入部分，用于将电解溶液引入到由所述衬底保持器保持的所述衬底和所述高电阻结构面对的区域中，从所述高电阻结构的侧面引出; 以及用于在第一电极和第二电极之间施加电压的电源。

公开(公告)号：US08663424B2

公开(公告)日：2014-03-04

申请号：US13115289

申请日：2011-05-25

申请人： Naoki Mihara ,  Kenji Sudou ,  Kazuo Murakami ,  Satoshi Furukawa

发明人： Naoki Mihara ,  Kenji Sudou ,  Kazuo Murakami ,  Satoshi Furukawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/3244 ,  H01J37/32449 ,  H01J37/32807

摘要： There is provided a plasma processing apparatus capable of performing a plasma process while surely supplying a gas. The plasma processing apparatus includes an outer gas supply member having gas supply openings for supplying a plasma processing gas and a jacket configured to support the outer gas supply member within a processing chamber and serving as a gas supply member supporting device. The jacket includes three supporting members installed so as to connect the outer gas supply member and a sidewall and arranged at a certain distance in a direction in which the outer gas supply member extends and mounts fixed to the sidewall so as to mount the supporting members therein. The supporting members include a first supporting member fixed to a first mount and a second supporting member movably supported in a second mount.

摘要翻译： 提供了能够在确保供给气体的同时进行等离子体处理的等离子体处理装置。 等离子体处理装置包括外部气体供给构件，其具有用于供给等离子体处理气体的气体供给开口和构造成在处理室内支撑外部气体供给构件并用作气体供给构件支撑装置的护套。 夹套包括三个支撑构件，其安装成连接外部气体供给构件和侧壁，并且在外部气体供给构件延伸并安装固定到侧壁的方向上以一定距离布置，以便将支撑构件安装在其中 。 支撑构件包括固定到第一安装件的第一支撑构件和可移动地支撑在第二安装件中的第二支撑构件。

公开(公告)号：US20120241090A1

公开(公告)日：2012-09-27

申请号：US13429638

申请日：2012-03-26

申请人： Jun Yoshikawa ,  Naoki Matsumoto ,  Naoki Mihara ,  Wataru Yoshikawa ,  Shota Yoshimura ,  Kazuki Takahashi

发明人： Jun Yoshikawa ,  Naoki Matsumoto ,  Naoki Mihara ,  Wataru Yoshikawa ,  Shota Yoshimura ,  Kazuki Takahashi

IPC分类号： B05C9/00 ,  H01L21/3065

CPC分类号： H01J37/32192 ,  H01J37/3244 ,  H01J37/32651

摘要： A plasma processing apparatus includes a processing chamber; a gas supply unit for supplying a processing gas into the processing chamber; a microwave generator for generating microwave; an antenna for introducing the microwave for plasma excitation into the processing chamber; a coaxial waveguide provided between the microwave generator and the antenna; a holding unit, disposed to face the antenna in a direction of a central axis line of the coaxial waveguide, for holding a processing target substrate; a dielectric window, provided between the antenna and the holding unit, for transmitting the microwave from the antenna into the processing chamber; and a dielectric rod provided in a region between the holding unit and the dielectric window along the central axis line.

摘要翻译： 等离子体处理装置包括处理室; 气体供给单元，用于将处理气体供给到所述处理室中; 用于产生微波的微波发生器; 用于将用于等离子体激发的微波引入处理室的天线; 设置在微波发生器和天线之间的同轴波导; 保持单元，设置成在所述同轴波导的中心轴线方向上面对所述天线，用于保持处理对象基板; 设置在所述天线和所述保持单元之间的用于将所述微波从所述天线发射到所述处理室中的电介质窗口; 以及设置在沿着中心轴线的保持单元和电介质窗口之间的区域中的介电棒。