发明申请
- 专利标题： DECOUPLING CAPACITORS RECESSED IN SHALLOW TRENCH ISOLATION
- 专利标题（中）： 解冻电容器在低温分离器中进行
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申请号： US13092046申请日： 2011-04-21
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公开(公告)号： US20120267759A1公开(公告)日： 2012-10-25
- 发明人: Mehul D. Shroff , Mark D. Hall
- 申请人： Mehul D. Shroff , Mark D. Hall
- 主分类号： H01L29/02
- IPC分类号： H01L29/02 ; H01L21/02
摘要：
A semiconductor process and apparatus provide a shallow trench isolation capacitor structure that is integrated in an integrated circuit and includes a bottom capacitor plate that is formed in a substrate layer below a trench opening, a capacitor dielectric layer and a recessed top capacitor plate that is covered by an STI region and isolated from cross talk by a sidewall dielectric layer.
公开/授权文献
- US08318576B2 Decoupling capacitors recessed in shallow trench isolation 公开/授权日：2012-11-27