发明申请
US20120273135A1 ELECTRODE UNIT, SUBSTRATE PROCESSING APPARATUS, AND TEMPERATURE CONTROL METHOD FOR ELECTRODE UNIT 审中-公开
电极单元,基板加工装置及电极单元的温度控制方法

  • 专利标题: ELECTRODE UNIT, SUBSTRATE PROCESSING APPARATUS, AND TEMPERATURE CONTROL METHOD FOR ELECTRODE UNIT
  • 专利标题(中): 电极单元,基板加工装置及电极单元的温度控制方法
  • 申请号: US13544875
    申请日: 2012-07-09
  • 公开(公告)号: US20120273135A1
    公开(公告)日: 2012-11-01
  • 发明人: Tsuyoshi HIDAJun Oyabu
  • 申请人: Tsuyoshi HIDAJun Oyabu
  • 申请人地址: JP Minato-ku
  • 专利权人: TOKYO ELECTRON LIMITED
  • 当前专利权人: TOKYO ELECTRON LIMITED
  • 当前专利权人地址: JP Minato-ku
  • 优先权: JP2008-054621 20080305
  • 主分类号: H01J7/24
  • IPC分类号: H01J7/24 H05H1/24 B44C1/22
ELECTRODE UNIT, SUBSTRATE PROCESSING APPARATUS, AND TEMPERATURE CONTROL METHOD FOR ELECTRODE UNIT
摘要:
An electrode unit is disposed in a substrate processing apparatus including a processing chamber for processing a substrate by plasma. The electrode unit includes an electrode layer having a surface exposed to inside of the processing chamber and an opposing surface disposed at the opposite side of the exposed surface, a heating layer and a cooling layer that the electrode layer, the heating layer and the cooling layer are disposed in said order from the processing chamber. The heating layer covers the opposing surface of the electrode layer while the cooling layer covers the opposing surface of the electrode layer via the heating layer, and a heat transfer layer filled up with a heat transfer medium is interposed between the heating layer and the cooling layer.
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