发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13546345申请日： 2012-07-11
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公开(公告)号： US20120273779A1公开(公告)日： 2012-11-01
- 发明人: Shunpei YAMAZAKI , Hidekazu MIYAIRI , Kengo AKIMOTO , Kojiro SHIRAISHI
- 申请人： Shunpei YAMAZAKI , Hidekazu MIYAIRI , Kengo AKIMOTO , Kojiro SHIRAISHI
- 申请人地址： JP Atsugi-shi
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2008-197127 20080731
- 主分类号： H01L29/786
- IPC分类号： H01L29/786
摘要：
In an active matrix display device, electric characteristics of thin film transistors included in a circuit are important, and performance of the display device depends on the electric characteristics. Thus, by using an oxide semiconductor film including In, Ga, and Zn for an inverted staggered thin film transistor, variation in electric characteristics of the thin film transistor can be reduced. Three layers of a gate insulating film, an oxide semiconductor layer and a channel protective layer are successively formed by a sputtering method without being exposed to air. Further, in the oxide semiconductor layer, the thickness of a region overlapping with the channel protective film is larger than that of a region in contact with a conductive film.
公开/授权文献
- US08841710B2 Semiconductor device and method for manufacturing the same 公开/授权日：2014-09-23
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