发明申请
- 专利标题： Strained thin body CMOS with Si:C and SiGe stressor
- 专利标题（中）： 应变薄体CMOS与Si：C和SiGe应力
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申请号： US13098352申请日： 2011-04-29
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公开(公告)号： US20120276695A1公开(公告)日： 2012-11-01
- 发明人: Kangguo Cheng , Bruce B. Doris , Ali Khakifirooz , Pranita Kulkarni , Ghavam G. Shahidi
- 申请人： Kangguo Cheng , Bruce B. Doris , Ali Khakifirooz , Pranita Kulkarni , Ghavam G. Shahidi
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
A method is disclosed which is characterized as being process integration of raised source/drain and strained body for ultra thin planar and FinFET CMOS devices. NFET and PFET devices have their source/drain raised by selective epitaxy with in-situ p-type doped SiGe for the PFET device, and in-situ n-type doped Si:C for the NFET device. Such raised source/drains offer low parasitic resistance and they impart a strain onto the device bodies of the correct sign for respective carrier, electron or hole, mobility enhancement.
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