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公开(公告)号：US08318574B2
公开(公告)日：2012-11-27
申请号：US12847208
申请日：2010-07-30
IPC分类号： H01L21/20
CPC分类号： H01L27/1203 , H01L27/10829 , H01L27/10867
摘要： In one exemplary embodiment, a semiconductor structure including: a SOI substrate having of a top silicon layer overlying an insulation layer, the insulation layer overlies a bottom silicon layer; a capacitor disposed at least partially in the insulation layer; a device disposed at least partially on the top silicon layer, where the device is coupled to a doped portion of the top silicon layer; a backside strap of first epitaxially-deposited material, at least a first portion of the backside strap underlies the doped portion of the top silicon layer, the backside strap is coupled to the doped portion of the top silicon layer at a first end of the backside strap and to the capacitor at a second end of the backside strap; and second epitaxially-deposited material that at least partially overlies the doped portion of the top silicon layer, the second epitaxially-deposited material further at least partially overlies the first portion.
摘要翻译： 在一个示例性实施例中，一种半导体结构，包括：具有覆盖绝缘层的顶部硅层的SOI衬底，所述绝缘层覆盖在底部硅层上; 至少部分地设置在绝缘层中的电容器; 至少部分地设置在所述顶部硅层上的器件，其中所述器件耦合到所述顶部硅层的掺杂部分; 第一外延沉积材料的背面带，背侧带的至少第一部分位于顶部硅层的掺杂部分的下面，背面带在背面的第一端耦合到顶部硅层的掺杂部分 带子和背部带子的第二端处的电容器; 以及至少部分地覆盖在顶部硅层的掺杂部分上的第二外延沉积材料，第二外延沉积材料还至少部分地覆盖在第一部分上。
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2.发明申请STRAINED THIN BODY CMOS DEVICE HAVING VERTICALLY RAISED SOURCE/DRAIN STRESSORS WITH SINGLE SPACER 有权具有单个间距的垂直源/源压应力的应变薄体CMOS器件公开(公告)号：US20120261757A1
公开(公告)日：2012-10-18
申请号：US13531053
申请日：2012-06-22
IPC分类号： H01L29/78 , H01L27/092
CPC分类号： H01L29/66477 , H01L21/823807 , H01L21/823814 , H01L21/84 , H01L27/1203 , H01L29/66628 , H01L29/66772 , H01L29/7848 , H01L29/78618
摘要： A method of forming a transistor device includes forming a patterned gate structure over a semiconductor substrate; forming a spacer layer over the semiconductor substrate and patterned gate structure; removing horizontally disposed portions of the spacer layer so as to form a vertical sidewall spacer adjacent the patterned gate structure; and forming a raised source/drain (RSD) structure over the semiconductor substrate and adjacent the vertical sidewall spacer, wherein the RSD structure has a substantially vertical sidewall profile so as to abut the vertical sidewall spacer and produce one of a compressive and a tensile strain on a channel region of the semiconductor substrate below the patterned gate structure.
摘要翻译： 一种形成晶体管器件的方法包括在半导体衬底上形成图案化栅极结构; 在半导体衬底上形成间隔层和图案化栅极结构; 去除间隔层的水平设置部分，以形成邻近图案化栅极结构的垂直侧壁间隔物; 以及在所述半导体衬底上并且邻近所述垂直侧壁间隔物形成升高的源极/漏极（RSD）结构，其中所述RSD结构具有基本上垂直的侧壁轮廓，以便邻接所述垂直侧壁间隔物并产生压缩和拉伸应变之一 在图案化的栅极结构下方的半导体衬底的沟道区上。
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公开(公告)号：US20120049284A1
公开(公告)日：2012-03-01
申请号：US12861976
申请日：2010-08-24
IPC分类号： H01L27/12 , H01L21/336
CPC分类号： H01L27/1211 , H01L27/1203
摘要： In one exemplary embodiment, a semiconductor structure includes: a semiconductor-on-insulator substrate with a top semiconductor layer overlying an insulation layer and the insulation layer overlies a bottom substrate layer; at least one first device at least partially overlying and disposed upon a first portion of the top semiconductor layer, where the first portion has a first thickness, a first width and a first depth; and at least one second device at least partially overlying and disposed upon a second portion of the top semiconductor layer, where the second portion has a second thickness, a second width and a second depth, where at least one of the following holds: the first thickness is greater than the second thickness, the first width is greater than the second width and the first depth is greater than the second depth.
摘要翻译： 在一个示例性实施例中，半导体结构包括：绝缘体上半导体衬底，具有覆盖绝缘层的顶部半导体层，绝缘层覆盖在底部衬底层上; 至少一个第一装置至少部分地覆盖并设置在顶部半导体层的第一部分上，其中第一部分具有第一厚度，第一宽度和第一深度; 以及至少一个第二装置，其至少部分地覆盖并设置在顶部半导体层的第二部分上，其中第二部分具有第二厚度，第二宽度和第二深度，其中以下至少一个成立：第一 厚度大于第二厚度，第一宽度大于第二宽度，第一深度大于第二深度。
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4.发明申请STRAINED THIN BODY CMOS DEVICE HAVING VERTICALLY RAISED SOURCE/DRAIN STRESSORS WITH SINGLE SPACER 有权具有单个间距的垂直源/源压应力的应变薄体CMOS器件公开(公告)号：US20110309446A1
公开(公告)日：2011-12-22
申请号：US12816399
申请日：2010-06-16
IPC分类号： H01L27/12 , H01L21/8238 , H01L29/786 , H01L21/336
CPC分类号： H01L29/66477 , H01L21/823807 , H01L21/823814 , H01L21/84 , H01L27/1203 , H01L29/66628 , H01L29/66772 , H01L29/7848 , H01L29/78618
摘要： A method of forming a transistor device includes forming a patterned gate structure over a semiconductor substrate; forming a spacer layer over the semiconductor substrate and patterned gate structure; removing horizontally disposed portions of the spacer layer so as to form a vertical sidewall spacer adjacent the patterned gate structure; and forming a raised source/drain (RSD) structure over the semiconductor substrate and adjacent the vertical sidewall spacer, wherein the RSD structure has a substantially vertical sidewall profile so as to abut the vertical sidewall spacer and produce one of a compressive and a tensile strain on a channel region of the semiconductor substrate below the patterned gate structure.
摘要翻译： 一种形成晶体管器件的方法包括在半导体衬底上形成图案化栅极结构; 在半导体衬底上形成间隔层和图案化栅极结构; 去除间隔层的水平设置部分，以形成邻近图案化栅极结构的垂直侧壁间隔物; 以及在所述半导体衬底上并且邻近所述垂直侧壁间隔物形成升高的源极/漏极（RSD）结构，其中所述RSD结构具有基本上垂直的侧壁轮廓，以便邻接所述垂直侧壁间隔物并产生压缩和拉伸应变之一 在图案化的栅极结构下方的半导体衬底的沟道区上。
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公开(公告)号：US09054211B2
公开(公告)日：2015-06-09
申请号：US13540801
申请日：2012-07-03
IPC分类号： H01L27/088 , H01L21/8234 , H01L21/8238 , H01L29/66 , H01L29/78
CPC分类号： H01L21/823431 , H01L21/823412 , H01L21/823807 , H01L21/823821 , H01L29/66795 , H01L29/7843 , H01L29/7846 , H01L29/785
摘要： An FET device structure has a Fin-FET device with a fin of a Si based material. An oxide element is abutting the fin and exerts pressure onto the fin. The Fin-FET device channel is compressively stressed due to the pressure on the fin. A further FET device structure has Fin-FET devices in a row. An oxide element extending perpendicularly to the row of fins is abutting the fins and exerts pressure onto the fins. Device channels of the Fin-FET devices are compressively stressed due to the pressure on the fins.
摘要翻译： FET器件结构具有具有Si基材料的翅片的Fin-FET器件。 氧化物元件邻接翅片并对翅片施加压力。 Fin-FET器件通道由于鳍上的压力而受到压缩应力。 另外的FET器件结构具有Fin-FET器件。 垂直于翅片排延伸的氧化物元件邻接散热片并对翅片施加压力。 Fin-FET器件的器件通道由于鳍片上的压力而受到压缩应力。
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6.发明授权Strained thin body CMOS device having vertically raised source/drain stressors with single spacer 有权应变的薄体CMOS器件具有单个间隔物的垂直升高的源/漏应力源公开(公告)号：US08546228B2
公开(公告)日：2013-10-01
申请号：US12816399
申请日：2010-06-16
IPC分类号： H01L21/336
CPC分类号： H01L29/66477 , H01L21/823807 , H01L21/823814 , H01L21/84 , H01L27/1203 , H01L29/66628 , H01L29/66772 , H01L29/7848 , H01L29/78618
摘要： A method of forming a transistor device includes forming a patterned gate structure over a semiconductor substrate; forming a spacer layer over the semiconductor substrate and patterned gate structure; removing horizontally disposed portions of the spacer layer so as to form a vertical sidewall spacer adjacent the patterned gate structure; and forming a raised source/drain (RSD) structure over the semiconductor substrate and adjacent the vertical sidewall spacer, wherein the RSD structure has a substantially vertical sidewall profile so as to abut the vertical sidewall spacer and produce one of a compressive and a tensile strain on a channel region of the semiconductor substrate below the patterned gate structure.
摘要翻译： 一种形成晶体管器件的方法包括在半导体衬底上形成图案化栅极结构; 在半导体衬底上形成间隔层和图案化栅极结构; 去除间隔层的水平设置部分，以形成邻近图案化栅极结构的垂直侧壁间隔物; 以及在所述半导体衬底上并且邻近所述垂直侧壁间隔物形成升高的源极/漏极（RSD）结构，其中所述RSD结构具有基本上垂直的侧壁轮廓，以便邻接所述垂直侧壁间隔物并产生压缩和拉伸应变之一 在图案化的栅极结构下方的半导体衬底的沟道区上。
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公开(公告)号：US08404540B2
公开(公告)日：2013-03-26
申请号：US13446602
申请日：2012-04-13
IPC分类号： H01L21/8238
CPC分类号： H01L29/66628 , H01L21/26513 , H01L29/0847 , H01L29/41783 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7834
摘要： A device and method for reducing junction leakage in a semiconductor junction includes forming a faceted raised structure in a source/drain region of the device. Dopants are diffused from the faceted raised structure into a substrate below the faceted raised structure to form source/drain regions. A sprinkle implantation is applied on the faceted raised structure to produce a multi-depth dopant profile in the substrate for the source/drain regions.
摘要翻译： 用于减少半导体结中的结漏电的器件和方法包括在器件的源极/漏极区域中形成刻面的凸起结构。 掺杂剂从小面凸起结构扩散到小平面凸起结构下面的基底中以形成源极/漏极区域。 在刻面凸起结构上施加喷洒注入，以在源/漏区的衬底中产生多深度掺杂物分布。
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8.发明授权Thin channel device and fabrication method with a reverse embedded stressor 有权具有反向嵌入式应力源的薄通道器件和制造方法公开(公告)号：US08383474B2
公开(公告)日：2013-02-26
申请号：US12789699
申请日：2010-05-28
IPC分类号： H01L21/8238
CPC分类号： H01L29/7849 , H01L21/26506 , H01L29/66772 , H01L29/785 , H01L29/78654
摘要： A device and method for inducing stress in a semiconductor layer includes providing a substrate having a dielectric layer formed between a first semiconductor layer and a second semiconductor layer. A removable buried layer is provided on or in the second semiconductor layer. A gate structure with side spacers is formed on the first semiconductor layer. Recesses are formed down to the removable buried layer in areas for source and drain regions. The removable buried layer is etched away to form an undercut below the dielectric layer below the gate structure. A stressor layer is formed in the undercut, and source and drain regions are formed.
摘要翻译： 用于在半导体层中诱发应力的装置和方法包括提供在第一半导体层和第二半导体层之间形成介电层的基板。 可移除的掩埋层设置在第二半导体层上或第二半导体层中。 在第一半导体层上形成具有侧面间隔物的栅极结构。 在源区和漏区的区域中形成凹陷到可移除的掩埋层。 蚀刻掉可移除的掩埋层，以在栅极结构下面的介电层下方形成底切。 在底切中形成应力层，形成源区和漏区。
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公开(公告)号：US08278175B2
公开(公告)日：2012-10-02
申请号：US12813311
申请日：2010-06-10
IPC分类号： H01L21/335
CPC分类号： H01L21/823431 , H01L21/823412 , H01L21/823807 , H01L21/823821 , H01L29/66795 , H01L29/7843 , H01L29/7846 , H01L29/785
摘要： Methods for fabricating FET device structures are disclosed. The methods include receiving a fin of a Si based material, and converting a region of the fin into an oxide element. The oxide element exerts pressure onto the fin where a Fin-FET device is fabricated. The exerted pressure induces compressive stress in the device channel of the Fin-FET device. The methods also include receiving a rectangular member of a Si based material and converting a region of the member into an oxide element. The methods further include patterning the member that N fins are formed in parallel, while being abutted by the oxide element, which exerts pressure onto the N fins. Fin-FET devices are fabricated in the compressed fins, which results in compressively stressed device channels. FET devices structures are also disclosed. An FET devices structure has a Fin-FET device with a fin of a Si based material. An oxide element is abutting the fin and exerts pressure onto the fin. The Fin-FET device channel is compressively stressed due to the pressure on the fin. A further FET device structure has Fin-FET devices in a row each having fins. An oxide element extending perpendicularly to the row of fins is abutting the fins and exerts pressure onto the fins. Device channels of the Fin-FET devices are compressively stressed due to the pressure on the fins.
摘要翻译： 公开了用于制造FET器件结构的方法。 所述方法包括接收Si基材料的翅片，以及将鳍片的区域转换为氧化物元件。 氧化物元件在制造Fin-FET器件的鳍片上施加压力。 施加的压力在Fin-FET器件的器件沟道中引起压应力。 所述方法还包括接收Si基材料的矩形构件并将所述构件的区域转换为氧化物元件。 所述方法进一步包括在与N个翅片施加压力的同时被N型翅片平行地形成的构件图案化。 Fin-FET器件制造在压缩鳍片中，这导致压缩应力器件通道。 还公开了FET器件结构。 FET器件结构具有具有Si基材料的翅片的Fin-FET器件。 氧化物元件邻接翅片并对翅片施加压力。 Fin-FET器件通道由于鳍上的压力而受到压缩应力。 另外的FET器件结构具有各自具有鳍片的Fin-FET器件。 垂直于翅片排延伸的氧化物元件邻接散热片并对翅片施加压力。 Fin-FET器件的器件通道由于鳍片上的压力而受到压缩应力。
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公开(公告)号：US08207038B2
公开(公告)日：2012-06-26
申请号：US12786397
申请日：2010-05-24
IPC分类号： H01L21/336
CPC分类号： H01L29/7843 , H01L21/823821 , H01L21/845 , H01L27/0924 , H01L27/1211 , H01L29/66795 , H01L29/7848 , H01L29/785 , H01L2029/7858
摘要： A method for fabricating an FET device is disclosed. The method includes Fin-FET devices with fins that are composed of a first material, and then merged together by epitaxial deposition of a second material. The fins are vertically recesses using a selective etch. A continuous silicide layer is formed over the increased surface areas of the first material and the second material, leading to smaller resistance. A stress liner overlaying the FET device is afterwards deposited. An FET device is also disclosed, which FET device includes a plurality of Fin-FET devices, the fins of which are composed of a first material. The FET device includes a second material, which is epitaxially merging the fins. The fins are vertically recessed relative to an upper surface of the second material. The FET device furthermore includes a continuous silicide layer formed over the fins and over the second material, and a stress liner covering the device.
摘要翻译： 公开了一种用于制造FET器件的方法。 该方法包括具有由第一材料构成的翅片的Fin-FET器件，然后通过外延沉积第二材料而合并在一起。 翅片是使用选择性蚀刻的垂直凹部。 在第一材料和第二材料的增加的表面积上形成连续的硅化物层，导致较小的电阻。 覆盖FET器件的应力衬垫之后被沉积。 还公开了一种FET器件，该FET器件包括多个Fin-FET器件，其翅片由第一材料构成。 FET器件包括第二材料，其外延地融合鳍片。 翅片相对于第二材料的上表面垂直凹入。 FET器件还包括形成在鳍片上方和第二材料上的连续硅化物层，以及覆盖该器件的应力衬垫。
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