发明申请
- 专利标题： METHOD OF OXIDIZING POLYSILAZANE
- 专利标题（中）： 氧化多晶硅的方法
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申请号： US13096976申请日： 2011-04-28
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公开(公告)号： US20120276714A1公开(公告)日： 2012-11-01
- 发明人: Shing-Yih Shih , Yi-Nan Chen , Hsien-Wen Liu
- 申请人： Shing-Yih Shih , Yi-Nan Chen , Hsien-Wen Liu
- 申请人地址： TW TAOYUAN
- 专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址： TW TAOYUAN
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A method of oxidizing polysilazane is disclosed, comprising providing a substrate, comprising a trench, forming a polysilazane layer in the trench, and treating the polysilazane layer in an acid containing solution applied with mega-sonic waves to oxidize the polysilazane layer, wherein the acid containing solution comprises phosphoric acid, sulfuric acid, H2SO4 added with O3 (SOM), H2SO4 added with H2O2 (SPM), H3PO4 added with O3, or H3PO4 added with H2O2, and removing the silicon oxide layer outside of the trench.