发明申请
- 专利标题: DIRECTIONALLY ETCHED NANOWIRE FIELD EFFECT TRANSISTORS
- 专利标题(中): 方向蚀刻的纳米效应晶体管
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申请号: US13550700申请日: 2012-07-17
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公开(公告)号: US20120280204A1公开(公告)日: 2012-11-08
- 发明人: Sarunya Bangsaruntip , Guy M. Cohen , Jeffrey W. Sleight
- 申请人: Sarunya Bangsaruntip , Guy M. Cohen , Jeffrey W. Sleight
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L29/08
- IPC分类号: H01L29/08
摘要:
A nanowire field effect transistor (FET) device, includes a source region comprising a first semiconductor layer disposed on a second semiconductor layer, the source region having a surface parallel to {110} crystalline planes and opposing sidewall surfaces parallel to the {110} crystalline planes, a drain region comprising the first semiconductor layer disposed on the second semiconductor layer, the source region having a face parallel to the {110} crystalline planes and opposing sidewall surfaces parallel to the {110} crystalline planes, and a nanowire channel member suspended by the source region and the drain region, wherein nanowire channel includes the first semiconductor layer, and opposing sidewall surfaces parallel to {100} crystalline planes and opposing faces parallel to the {110} crystalline planes.
公开/授权文献
- US08772755B2 Directionally etched nanowire field effect transistors 公开/授权日:2014-07-08