发明申请
- 专利标题: THIN FILM TRANSISTOR, DISPLAY DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题(中): 薄膜晶体管,显示装置和液晶显示装置及其制造方法
-
申请号: US13552845申请日: 2012-07-19
-
公开(公告)号: US20120282717A1公开(公告)日: 2012-11-08
- 发明人: Shunpei YAMAZAKI , Shinji Maekawa , Yohei Kanno
- 申请人: Shunpei YAMAZAKI , Shinji Maekawa , Yohei Kanno
- 申请人地址: JP Atsugi-shi
- 专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址: JP Atsugi-shi
- 优先权: JP2003-403666 20031202; JP2003-403848 20031202
- 主分类号: H01L33/44
- IPC分类号: H01L33/44
摘要:
As a wiring becomes thicker, discontinuity of an insulating film covering the wiring has become a problem. It is difficult to form a wiring with width thin enough for a thin film transistor used for a current high definition display device. As a wiring is made thinner, signal delay due to wiring resistance has become a problem. In view of the above problems, the invention provides a structure in which a conductive film is formed in a hole of an insulating film, and the surfaces of the conductive film and the insulating film are flat. As a result, discontinuity of thin films covering a conductive film and an insulating film can be prevented. A wiring can be made thinner by controlling the width of the hole. Further, a wiring can be made thicker by controlling the depth of the hole.
公开/授权文献
信息查询
IPC分类: