发明申请
- 专利标题： METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- 专利标题（中）： 制造半导体器件的方法
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申请号： US13527179申请日： 2012-06-19
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公开(公告)号： US20120282745A1公开(公告)日： 2012-11-08
- 发明人: Hideo Yamamoto , Kei Takehara
- 申请人： Hideo Yamamoto , Kei Takehara
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 优先权： JP2009-107347 20090427
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method of fabricating a semiconductor device according to the present invention includes forming a first trench and a second trench by etching the first trench further, in an epitaxial layer formed over a substrate, extending a width of the second trench, forming an oxidize film by oxidizing the extended second trench, and filling an electrode material in the first trench and the second trench including the oxidized film formed therein. The method of fabricating a semiconductor device according to the present invention enables to fabricate a semiconductor device that improves the withstand voltage between a drain and a source and reduce the on-resistance.
公开/授权文献
- US08609493B2 Method of fabricating semiconductor device 公开/授权日：2013-12-17
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