发明申请
- 专利标题： Semiconductor Device and Method of Singulating Thin Semiconductor Wafer on Carrier Along Modified Region Within Non-Active Region Formed by Irradiating Energy
- 专利标题（中）： 半导体器件和方法，通过辐射能形成非活动区域内的改性区域上载体上的薄半导体晶片
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申请号： US13469754申请日： 2012-05-11
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公开(公告)号： US20120286429A1公开(公告)日： 2012-11-15
- 发明人: Byung Joon Han , Il Kwon Shim , Won Kyoung Choi
- 申请人： Byung Joon Han , Il Kwon Shim , Won Kyoung Choi
- 申请人地址： SG Singapore
- 专利权人： STATS ChipPAC, Ltd.
- 当前专利权人： STATS ChipPAC, Ltd.
- 当前专利权人地址： SG Singapore
- 主分类号： H01L23/498
- IPC分类号： H01L23/498 ; H01L21/78
摘要：
A semiconductor device comprises a carrier including an adhesive disposed over the carrier. The semiconductor device further comprises a semiconductor wafer including a plurality of semiconductor die separated by a non-active region. A plurality of bumps is formed over the semiconductor die. The semiconductor wafer is mounted to the carrier with the adhesive disposed around the plurality of bumps. Irradiated energy is applied to the non-active region to form a modified region within the non-active region. The semiconductor wafer is singulated along the modified region to separate the semiconductor die. The semiconductor wafer is singulated along the modified region by applying stress to the semiconductor wafer. The adhesive is removed from around the plurality of bumps after singulating the semiconductor wafer. The semiconductor wafer includes a plurality of semiconductor die comprising through silicon vias. The modified region optionally includes a plurality of vertically stacked modified regions.
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