发明申请
US20120292636A1 SIC DEVICES WITH HIGH BLOCKING VOLTAGE TERMINATED BY A NEGATIVE BEVEL
有权
具有高阻塞电压的SIC器件由负极水平端接
- 专利标题： SIC DEVICES WITH HIGH BLOCKING VOLTAGE TERMINATED BY A NEGATIVE BEVEL
- 专利标题（中）： 具有高阻塞电压的SIC器件由负极水平端接
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申请号： US13108366申请日： 2011-05-16
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公开(公告)号： US20120292636A1公开(公告)日： 2012-11-22
- 发明人: Qingchun Zhang , Craig Capell , Anant Agarwal , Sei-Hyung Ryu
- 申请人： Qingchun Zhang , Craig Capell , Anant Agarwal , Sei-Hyung Ryu
- 申请人地址： US NC Durham
- 专利权人： CREE, INC.
- 当前专利权人： CREE, INC.
- 当前专利权人地址： US NC Durham
- 主分类号： H01L29/161
- IPC分类号： H01L29/161
摘要：
A negative bevel edge termination for a Silicon Carbide (SiC) semiconductor device is disclosed. In one embodiment, the negative bevel edge termination includes multiple steps that approximate a smooth negative bevel edge termination at a desired slope. More specifically, in one embodiment, the negative bevel edge termination includes at least five steps, at least ten steps, or at least 15 steps. The desired slope is, in one embodiment, less than or equal to fifteen degrees. In one embodiment, the negative bevel edge termination results in a blocking voltage for the semiconductor device of at least 10 kilovolts (kV) or at least 12 kV. The semiconductor device is preferably, but not necessarily, a thyristor such as a power thyristor, a Bipolar Junction Transistor (BJT), an Insulated Gate Bipolar Transistor (IGBT), a U-channel Metal-Oxide-Semiconductor Field Effect Transistor (UMOSFET), or a PIN diode.