发明申请
US20120292641A1 SEMICONDUCTOR DEVICE HAVING AT LEAST ONE CONTACT, AND MANUFACTURING METHOD FOR A SEMICONDUCTOR DEVICE HAVING AT LEAST ONE CONTACT 有权
具有至少一个接触件的半导体器件以及具有至少一个接触件的半导体器件的制造方法

  • 专利标题: SEMICONDUCTOR DEVICE HAVING AT LEAST ONE CONTACT, AND MANUFACTURING METHOD FOR A SEMICONDUCTOR DEVICE HAVING AT LEAST ONE CONTACT
  • 专利标题(中): 具有至少一个接触件的半导体器件以及具有至少一个接触件的半导体器件的制造方法
  • 申请号: US13446531
    申请日: 2012-04-13
  • 公开(公告)号: US20120292641A1
    公开(公告)日: 2012-11-22
  • 发明人: Frederik SchreyAchim TrautmannJoachim Rudhard
  • 申请人: Frederik SchreyAchim TrautmannJoachim Rudhard
  • 优先权: DE102011075888.7 20110516
  • 主分类号: H01L29/161
  • IPC分类号: H01L29/161 H01L21/28
SEMICONDUCTOR DEVICE HAVING AT LEAST ONE CONTACT, AND MANUFACTURING METHOD FOR A SEMICONDUCTOR DEVICE HAVING AT LEAST ONE CONTACT
摘要:
A semiconductor device having a substrate, and at least one contact, situated on and/or above a surface of the substrate, having at least one layer made of a conductive material, the conductive material including at least one metal. The layer made of the conductive material is sputtered on, and has tear-off marks on at least one outer side area between an outer base area facing the surface and an outer contact area facing away from the surface. A manufacturing method for a semiconductor device having at least one contact is also described.
信息查询
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L29/00 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件(H01L31/00至H01L47/00,H01L51/05优先;除半导体或其电极之外的零部件入H01L23/00;由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00)
H01L29/02 .按其半导体本体的特征区分的
H01L29/12 ..按其构成材料的特征区分的
H01L29/16 ...除掺杂材料或其他杂质外,只包括以游离态存在的周期系中Ⅳ族元素的
H01L29/161 ....包含在H01L29/16组中的两种或更多种元素的
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