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14 条记录 (耗时 0.015 秒)

    SEMICONDUCTOR DEVICE HAVING AT LEAST ONE CONTACT, AND MANUFACTURING METHOD FOR A SEMICONDUCTOR DEVICE HAVING AT LEAST ONE CONTACT
    2.
    发明申请
    SEMICONDUCTOR DEVICE HAVING AT LEAST ONE CONTACT, AND MANUFACTURING METHOD FOR A SEMICONDUCTOR DEVICE HAVING AT LEAST ONE CONTACT 有权
    具有至少一个接触件的半导体器件以及具有至少一个接触件的半导体器件的制造方法

    公开(公告)号：US20120292641A1

    公开(公告)日：2012-11-22

    申请号：US13446531

    申请日：2012-04-13

    申请人： Frederik Schrey ,  Achim Trautmann ,  Joachim Rudhard

    发明人： Frederik Schrey ,  Achim Trautmann ,  Joachim Rudhard

    IPC分类号： H01L29/161 ,  H01L21/28

    CPC分类号： H01L21/28506 ,  H01L21/048 ,  H01L21/7688 ,  H01L29/1608

    摘要： A semiconductor device having a substrate, and at least one contact, situated on and/or above a surface of the substrate, having at least one layer made of a conductive material, the conductive material including at least one metal. The layer made of the conductive material is sputtered on, and has tear-off marks on at least one outer side area between an outer base area facing the surface and an outer contact area facing away from the surface. A manufacturing method for a semiconductor device having at least one contact is also described.

    摘要翻译： 一种半导体器件，其具有位于衬底表面上和/或上表面上的衬底和至少一个触点，该衬底具有至少一层由导电材料制成的层，该导电材料包括至少一种金属。 由导电材料制成的层被溅射在面向表面的外部基底区域和背离表面的外部接触区域之间的至少一个外侧区域上并具有撕裂痕迹。 还描述了具有至少一个接触的半导体器件的制造方法。

    METHOD FOR STRUCTURING SILICON CARBIDE WITH THE AID OF FLUORINE-CONTAINING COMPOUNDS
    6.
    发明申请
    METHOD FOR STRUCTURING SILICON CARBIDE WITH THE AID OF FLUORINE-CONTAINING COMPOUNDS 审中-公开
    含有氟化合物的碳化硅结构的方法

    公开(公告)号：US20100086463A1

    公开(公告)日：2010-04-08

    申请号：US12560978

    申请日：2009-09-16

    申请人： Joachim Rudhard ,  Tino Fuchs

    发明人： Joachim Rudhard ,  Tino Fuchs

    IPC分类号： C01B31/36 ,  B44C1/22

    CPC分类号： C04B41/5346 ,  C04B41/91 ,  C04B2111/00844 ,  H01L21/3065 ,  H01L21/3081

    摘要： A method for etching silicon carbide, a mask being produced on a silicon carbide layer, the unmasked areas of the silicon carbide layer being etched using a fluorine-containing compound, which is selected from the group including interhalogen compounds of fluorine and/or xenon difluoride. The use of chlorine trifluoride, chlorine pentafluoride, and/or xenon difluoride for structuring silicon carbide layers covered with masks containing silicon dioxide and/or silicon oxide carbide; a structured silicon carbide layer obtained by the method, and a microstructured electromechanical component or a microelectronic component including a structured silicon carbide layer obtained by the method.

    摘要翻译： 一种用于蚀刻碳化硅的方法，在碳化硅层上制造掩模，使用含氟化合物蚀刻碳化硅层的未掩蔽区域，所述氟化合物选自氟和/或氙二氟化物的卤间化合物 。 使用三氟化氯，五氟化氯和/或二氧化氙来构造用包含二氧化硅和/或氧化硅碳化物的掩模覆盖的碳化硅层; 通过该方法获得的结构化碳化硅层，以及包含通过该方法获得的结构化碳化硅层的微结构化机电部件或微电子部件。

    Sensor arrangement, in particular a micro-mechanical sensor arrangement
    7.
    发明授权
    Sensor arrangement, in particular a micro-mechanical sensor arrangement 有权
    传感器布置，特别是微机械传感器装置

    公开(公告)号：US07334491B2

    公开(公告)日：2008-02-26

    申请号：US10477176

    申请日：2002-04-19

    申请人： Joachim Rudhard ,  Klaus Heyers

    发明人： Joachim Rudhard ,  Klaus Heyers

    IPC分类号： H01L29/82

    CPC分类号： G01P15/0802 ,  B81B2201/0235 ,  B81C1/0023 ,  G01P1/023

    摘要： A sensor array, in particular a micromechanical sensor array, and methods for manufacturing the sensor array are provided, which sensor array includes a sensor section for supplying certain sensor signals, and a cover section provided on the sensor section to form a hermetically sealed sensor interior. An electronic analyzer device is at least partially integratable into cover section for analysis of the sensor signals, and electrically connectable to a corresponding circuit device of the sensor section.

    摘要翻译： 提供了传感器阵列，特别是微机械传感器阵列，以及用于制造传感器阵列的方法，该传感器阵列包括用于提供某些传感器信号的传感器部分和设置在传感器部分上的盖部分，以形成密封的传感器内部 。 电子分析仪装置至少部分可整合到盖部分中，用于分析传感器信号，并且可电连接到传感器部分的对应电路装置。

    Method for Capping a MEMS Wafer and MEMS Wafer
    8.
    发明申请
    Method for Capping a MEMS Wafer and MEMS Wafer 有权
    封装MEMS晶片和MEMS晶圆的方法

    公开(公告)号：US20110127622A1

    公开(公告)日：2011-06-02

    申请号：US13056186

    申请日：2009-06-25

    申请人： Joachim Rudhard ,  Thorsten Mueller

    发明人： Joachim Rudhard ,  Thorsten Mueller

    IPC分类号： H01L29/84 ,  H01L21/66

    CPC分类号： B81C1/00333 ,  B81C2203/0136

    摘要： The invention relates to a method for capping a MEMS wafer (1), in particular a sensor and/or actuator wafer, with at least one mechanical functional element (10). According to the invention, it is provided that the movable mechanical functional element (10) is fixed by means of a sacrificial layer (14), and that a cap layer (19) is applied to, in particular epitaxially grown onto, the sacrificial layer (14) and/or to at least one intermediate layer (17) applied to the sacrificial layer (14). The invention also relates to a capped MEMS wafer (1).

    摘要翻译： 本发明涉及一种用至少一个机械功能元件（10）封装MEMS晶片（1），特别是传感器和/或致动器晶片的方法。 根据本发明，提供了可移动机械功能元件（10）借助于牺牲层（14）固定，并且覆盖层（19）被特别地外延生长在牺牲层上 （14）和/或施加到牺牲层（14）的至少一个中间层（17）。 本发明还涉及封装的MEMS晶片（1）。