发明申请
US20120295385A1 LIGHTLY-DOPED DRAINS (LDD) OF IMAGE SENSOR TRANSISTORS USING SELECTIVE EPITAXY
有权
使用选择性外观的图像传感器晶体管的轻型排水(LDD)
- 专利标题: LIGHTLY-DOPED DRAINS (LDD) OF IMAGE SENSOR TRANSISTORS USING SELECTIVE EPITAXY
- 专利标题(中): 使用选择性外观的图像传感器晶体管的轻型排水(LDD)
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申请号: US13559467申请日: 2012-07-26
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公开(公告)号: US20120295385A1公开(公告)日: 2012-11-22
- 发明人: Duli Mao , Hsin-Chih Tai , Howard E. Rhodes , Vincent Venezia , Yin Qian
- 申请人: Duli Mao , Hsin-Chih Tai , Howard E. Rhodes , Vincent Venezia , Yin Qian
- 申请人地址: US CA Santa Clara
- 专利权人: OMNIVISION TECHNOLOGIES, INC.
- 当前专利权人: OMNIVISION TECHNOLOGIES, INC.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01L31/0248
- IPC分类号: H01L31/0248
摘要:
Embodiments of the present invention are directed to an image sensor having pixel transistors and peripheral transistors disposed in a silicon substrate. For some embodiments, a protective coating is disposed on the peripheral transistors and doped silicon is epitaxially grown on the substrate to form lightly-doped drain (LDD) areas for the pixel transistors. The protective oxide may be used to prevent epitaxial growth of silicon on the peripheral transistors during formation of the LDD areas of the pixel transistors.
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