发明申请
- 专利标题： THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 薄膜晶体管及其制造方法
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申请号： US13564082申请日： 2012-08-01
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公开(公告)号： US20120295407A1公开(公告)日： 2012-11-22
- 发明人: Byung-wook YOO , Sang-yoon LEE , Myung-kwan RYU , Tae-sang KIM , Jang-yeon KWON , Kyung-bae PARK , Kyung-seok SON , Ji-sim JUNG
- 申请人： Byung-wook YOO , Sang-yoon LEE , Myung-kwan RYU , Tae-sang KIM , Jang-yeon KWON , Kyung-bae PARK , Kyung-seok SON , Ji-sim JUNG
- 优先权： KR10-2008-0093862 20080924
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.
公开/授权文献
- US08383467B2 Thin film transistor and method of manufacturing the same 公开/授权日：2013-02-26