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公开(公告)号:US20120295407A1
公开(公告)日:2012-11-22
申请号:US13564082
申请日:2012-08-01
申请人: Byung-wook YOO , Sang-yoon LEE , Myung-kwan RYU , Tae-sang KIM , Jang-yeon KWON , Kyung-bae PARK , Kyung-seok SON , Ji-sim JUNG
发明人: Byung-wook YOO , Sang-yoon LEE , Myung-kwan RYU , Tae-sang KIM , Jang-yeon KWON , Kyung-bae PARK , Kyung-seok SON , Ji-sim JUNG
IPC分类号: H01L21/336
CPC分类号: H01L29/78696 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L29/66765
摘要: A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.
摘要翻译: 提供薄膜晶体管(TFT)及其制造方法,TFT在栅极上包括栅极绝缘层。 可以在对应于栅极的栅极绝缘层的一部分上形成沟道。 可以在通道的表面上形成金属材料。 金属材料使通道结晶。 源极和漏极可以接触通道的侧表面。
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2.
公开(公告)号:US20100051942A1
公开(公告)日:2010-03-04
申请号:US12615315
申请日:2009-11-10
申请人: Myung-kwan RYU , Jun-seong KIM , Sang-yoon LEE , Euk-che HWANG , Tae-sang KIM , Jang-yeon KWON , Kyung-bae PARK , Kyung-seok SON , Ji-sim JUNG
发明人: Myung-kwan RYU , Jun-seong KIM , Sang-yoon LEE , Euk-che HWANG , Tae-sang KIM , Jang-yeon KWON , Kyung-bae PARK , Kyung-seok SON , Ji-sim JUNG
IPC分类号: H01L29/227
CPC分类号: H01L29/7869
摘要: A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.
摘要翻译: 这里提供了一种ZnO基薄膜晶体管(TFT),以及TFT的制造方法。 ZnO基TFT具有包含ZnO和ZnCl的沟道层,其中ZnCl相对于等离子体具有比ZnO高的结合能。 ZnCl是通过整个沟道层形成的,具体地形成在沟道层表面附近的区域。 由于ZnCl强度足够暴露于等离子体蚀刻气体时不会分解,因此可以防止载流子浓度的增加。 ZnCl在沟道层中的分布可能是由于在沟道层图案化期间在等离子体气体中包含氯(Cl)。
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3.
公开(公告)号:US20080283831A1
公开(公告)日:2008-11-20
申请号:US11960567
申请日:2007-12-19
申请人: Myung-kwan RYU , Jun-seong KIM , Sang-yoon LEE , Euk-che HWANG , Tae-sang KIM , Jang-yeon KWON , Kyung-bae PARK , Kyung-seok SON , Ji-sim JUNG
发明人: Myung-kwan RYU , Jun-seong KIM , Sang-yoon LEE , Euk-che HWANG , Tae-sang KIM , Jang-yeon KWON , Kyung-bae PARK , Kyung-seok SON , Ji-sim JUNG
IPC分类号: H01L29/227 , H01L21/34
CPC分类号: H01L29/7869
摘要: A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.
摘要翻译: 这里提供了一种ZnO基薄膜晶体管(TFT),以及TFT的制造方法。 ZnO基TFT具有包含ZnO和ZnCl的沟道层,其中ZnCl相对于等离子体具有比ZnO高的结合能。 ZnCl是通过整个沟道层形成的,具体地形成在沟道层表面附近的区域。 由于ZnCl强度足够暴露于等离子体蚀刻气体时不会分解,因此可以防止载流子浓度的增加。 ZnCl在沟道层中的分布可能是由于在沟道层图案化期间在等离子体气体中包含氯(Cl)。
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